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	A low-loss RF MEMS switch with dielectric layer on the lower surface of the bridge
	Chen, Kenle ; Dai, Yueyang ; Zou, Xudong ; Zhang, Jinwen
	2009
关键词	RF MEMS switch insertion loss dielectric dayer fringing capacitance
英文摘要	This paper reports a low-loss RF MEMS switch with the dielectric layer on the lower surface of bridge instead of on the transmission line as conventional switches. Analysis on the fringing capacitance of switch capacitor shows this kind of switch has much smaller fringing capacitance and lower insertion loss than conventional one when the bridge is wider than transmission line. The simulation results obtained from 3D electromagnetic simulation tools well demonstrate the theoretical analysis. As increasing compact miniaturization and highly developed integration, this kind of switch with low insertion loss is expected a broad application in the future.; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/NEMS.2009.5068547
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153266]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Chen, Kenle,Dai, Yueyang,Zou, Xudong,et al. A low-loss RF MEMS switch with dielectric layer on the lower surface of the bridge. 2009-01-01.

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