Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on   Si(001)

doi:10.1016/j.ssc.2005.11.008

CORC > 北京大学 > 信息科学技术学院

	Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001)
	Liu, LF ; Chen, NF ; Wang, Y ; Zhang, X ; Yin, ZG ; Yang, F ; Chai, CL
刊名	固体通讯
	2006
关键词	magnetron sputtering MnxGe1-x ferromagnetism N-TYPE GE FERROMAGNETISM SEMICONDUCTOR SPINTRONICS
DOI	10.1016/j.ssc.2005.11.008
英文摘要	We have grown MnxGe1-x films (x=0, 0.06, 0.1) on Si (001) substrates by magnetron cosputtering, and have explored the resulting structural, morphological, electrical and magnetic properties. X-ray diffraction results show there is no secondary phase except Ge in the Mn0.06Ge0.94 film while new phase appears in the Mn0.1Ge0.9 film. Nanocrystals are formed in the Mn0.06Ge0.94 film, determined by field-emission scanning electron microscopy. Hall measurement indicates that the Mn0.06Ge0.94 film is p-type semiconductor and hole carrier concentration is 6.07 X 10(19) cm(-3) while the MnxGe1-x films with x=0 has n-type carriers. The field dependence of magnetization was measured using alternating gradient magnetometer, and it has been indicated that the Mn0.06Ge0.94 film is ferromagnetic at room temperature. (c) 2005 Elsevier Ltd. All rights reserved.; Physics, Condensed Matter; SCI(E); EI; 4; ARTICLE; 3; 126-128; 137
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153058]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, LF,Chen, NF,Wang, Y,et al. Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001)[J]. 固体通讯,2006.
APA	Liu, LF.,Chen, NF.,Wang, Y.,Zhang, X.,Yin, ZG.,...&Chai, CL.(2006).Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001).固体通讯.
MLA	Liu, LF,et al."Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001)".固体通讯 (2006).