Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001) | |
Liu, LF ; Chen, NF ; Wang, Y ; Zhang, X ; Yin, ZG ; Yang, F ; Chai, CL | |
刊名 | 固体通讯
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2006 | |
关键词 | magnetron sputtering MnxGe1-x ferromagnetism N-TYPE GE FERROMAGNETISM SEMICONDUCTOR SPINTRONICS |
DOI | 10.1016/j.ssc.2005.11.008 |
英文摘要 | We have grown MnxGe1-x films (x=0, 0.06, 0.1) on Si (001) substrates by magnetron cosputtering, and have explored the resulting structural, morphological, electrical and magnetic properties. X-ray diffraction results show there is no secondary phase except Ge in the Mn0.06Ge0.94 film while new phase appears in the Mn0.1Ge0.9 film. Nanocrystals are formed in the Mn0.06Ge0.94 film, determined by field-emission scanning electron microscopy. Hall measurement indicates that the Mn0.06Ge0.94 film is p-type semiconductor and hole carrier concentration is 6.07 X 10(19) cm(-3) while the MnxGe1-x films with x=0 has n-type carriers. The field dependence of magnetization was measured using alternating gradient magnetometer, and it has been indicated that the Mn0.06Ge0.94 film is ferromagnetic at room temperature. (c) 2005 Elsevier Ltd. All rights reserved.; Physics, Condensed Matter; SCI(E); EI; 4; ARTICLE; 3; 126-128; 137 |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/153058] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Liu, LF,Chen, NF,Wang, Y,et al. Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001)[J]. 固体通讯,2006. |
APA | Liu, LF.,Chen, NF.,Wang, Y.,Zhang, X.,Yin, ZG.,...&Chai, CL.(2006).Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001).固体通讯. |
MLA | Liu, LF,et al."Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001)".固体通讯 (2006). |
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