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	A physics-based analytic solution to the MOSFET surface potential from accumulation to strong-inversion region
	He, Jin ; Chan, Mansun ; Zhang, Xing ; Wang, Yangyuan
刊名	ieee电子器件汇刊
	2006
关键词	analytic solution compact modeling MOSFETs surface potential LAMBERT W-FUNCTION CIRCUIT SIMULATION MODEL
DOI	10.1109/TED.2006.880364
英文摘要	A physics-based analytic solution to the surface potential from the accumulation to the strong-inversion region has been derived from the complete MOSFET surface potential equation in this paper without any need for smooth functions or simplification by dropping some second-order related terms. Its high accuracy in predicting the surface potential and the transcapacitance under various bias conditions has also been verified by a comparison with the numerical results. The explicit surface potential solution not only leads to a more clear understanding of MOSFET device physics but also provides a better platform to develop the advanced surface potential-based model for the circuit simulation.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000240076500006&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; SCI(E); 29; ARTICLE; 9; 2008-2016; 53
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152992]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, Jin,Chan, Mansun,Zhang, Xing,et al. A physics-based analytic solution to the MOSFET surface potential from accumulation to strong-inversion region[J]. ieee电子器件汇刊,2006.
APA	He, Jin,Chan, Mansun,Zhang, Xing,&Wang, Yangyuan.(2006).A physics-based analytic solution to the MOSFET surface potential from accumulation to strong-inversion region.ieee电子器件汇刊.
MLA	He, Jin,et al."A physics-based analytic solution to the MOSFET surface potential from accumulation to strong-inversion region".ieee电子器件汇刊 (2006).

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