Analytic channel potential solution to the undoped surrounding-gate   MOSFETs

doi:10.1016/j.sse.2007.02.035

CORC > 北京大学 > 信息科学技术学院

	Analytic channel potential solution to the undoped surrounding-gate MOSFETs
	He, Jin ; Tao, Yadong ; Liu, Feng ; Feng, Jie ; Yang, Shengqi
刊名	固体电子学
	2007
关键词	non-classical CMOS surrounding-gate MOSFETs surface potential compact modeling LAMBERT W-FUNCTION MODEL
DOI	10.1016/j.sse.2007.02.035
英文摘要	A continuous and analytic channel potential solution for uncloped (lightly doped) surrounding-gate (SRG) MOSFETs is presented in this article. It is based on the exact solution of Poisson's equation, allowing the surface potential to be adequately described from the subthreshold to strong inversion region. It is demonstrated that the analytic channel potential characteristics agree with the Newton-Raphson iterative solutions for all ranges of gate and quasi- Fermi-potential. (c) 2007 Elsevier Ltd. All rights reserved.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000247353200027&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; Physics, Condensed Matter; SCI(E); EI; 15; ARTICLE; 5; 802-805; 51
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152989]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, Jin,Tao, Yadong,Liu, Feng,et al. Analytic channel potential solution to the undoped surrounding-gate MOSFETs[J]. 固体电子学,2007.
APA	He, Jin,Tao, Yadong,Liu, Feng,Feng, Jie,&Yang, Shengqi.(2007).Analytic channel potential solution to the undoped surrounding-gate MOSFETs.固体电子学.
MLA	He, Jin,et al."Analytic channel potential solution to the undoped surrounding-gate MOSFETs".固体电子学 (2007).