Hafnium interlayer method to improve the thermal stability of NiSi film

doi:10.1016/j.mee.2008.04.026

CORC > 北京大学 > 信息科学技术学院

	Hafnium interlayer method to improve the thermal stability of NiSi film
	Yue, Xiong-wei ; Zhang, Li-chun ; Gao, Yu-zhi ; Jin, Hai-yan
刊名	微电子工程
	2008
关键词	nickel silicide thermal stability agglomeration diffusion barrier phase change Schottky diode PHASE
DOI	10.1016/j.mee.2008.04.026
英文摘要	The effect of a thin Hafnium interlayer on the thermal stability of NiSi film has been investigated. Both Xray diffraction and Raman spectra show that no high resistivity NiSi2 appears in the Hf-additioned films which were post-annealed at temperatures ranging from 600 degrees C to 800 degrees C. Auger electron spectroscopy and Rutherford back scattering show that the Hf interlayer has moved to the top of the film after rapid thermal annealing, working as the diffusion barrier for upper Ni atoms. The three-dimensional surface morphology by atom force microscopy shows that the agglomeration of NiSi is effectively suppressed, which is attributed to the barrier effect of the Hf interlayer. The fabricated Ni(Hf)Si/Si Schottky diodes still displays good current-voltage characteristics even after annealed at temperatures varied from 650 degrees C to 800 degrees C, which further show that the Hf interlayer can improve the thermal stability of NiSi. (c) 2008 Elsevier B.V. All rights reserved.; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Optics; Physics, Applied; SCI(E); EI; 0; ARTICLE; 8; 1723-1727; 85
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152893]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yue, Xiong-wei,Zhang, Li-chun,Gao, Yu-zhi,et al. Hafnium interlayer method to improve the thermal stability of NiSi film[J]. 微电子工程,2008.
APA	Yue, Xiong-wei,Zhang, Li-chun,Gao, Yu-zhi,&Jin, Hai-yan.(2008).Hafnium interlayer method to improve the thermal stability of NiSi film.微电子工程.
MLA	Yue, Xiong-wei,et al."Hafnium interlayer method to improve the thermal stability of NiSi film".微电子工程 (2008).