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Unipolar Resistive Switch Based on Silicon Monoxide Realized by CMOS Technology
Zhang, Lijie ; Huang, Ru ; Gao, Dejin ; Wu, Dake ; Kuang, Yongbian ; Tang, Poren ; Ding, Wei ; Wang, Albert Z. H. ; Wang, Yangyuan
刊名ieee electron device letters
2009
关键词Conduction mechanism memory resistive switching silicon monoxide (SiO) FILMS RESISTANCE SATURATION
DOI10.1109/LED.2009.2024650
英文摘要In this letter, a reliable nonvolatile resistive switching device based on silicon monoxide (SiO) is demonstrated. The device was fabricated with a low-temperature process that can be compatible with a CMOS back-end process and attractive for 3-D memory integration. The fabricated Cu/SiO/W device was found to have a repeatable unipolar resistive switching behavior. The results show excellent on/off resistance ratio (over 10(4)) and good retention performance. The switching mechanism of the device is analyzed by experimental data and probably can be attributed to the behaviors of copper ions in the bulk of SiO under different voltages.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000268342400027&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; SCI(E); EI; 19; ARTICLE; 8; 870-872; 30
语种英语
内容类型期刊论文
源URL[http://ir.pku.edu.cn/handle/20.500.11897/152847]  
专题信息科学技术学院
推荐引用方式
GB/T 7714
Zhang, Lijie,Huang, Ru,Gao, Dejin,et al. Unipolar Resistive Switch Based on Silicon Monoxide Realized by CMOS Technology[J]. ieee electron device letters,2009.
APA Zhang, Lijie.,Huang, Ru.,Gao, Dejin.,Wu, Dake.,Kuang, Yongbian.,...&Wang, Yangyuan.(2009).Unipolar Resistive Switch Based on Silicon Monoxide Realized by CMOS Technology.ieee electron device letters.
MLA Zhang, Lijie,et al."Unipolar Resistive Switch Based on Silicon Monoxide Realized by CMOS Technology".ieee electron device letters (2009).
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