Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si   Platform

doi:10.1109/LED.2009.2028905

CORC > 北京大学 > 信息科学技术学院

	Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform
	Lv, Jianan ; Yang, Zhenchuan ; Yan, Guizhen ; Lin, Wenkui ; Cai, Yong ; Zhang, Baoshun ; Chen, Kevin J.
刊名	ieee electron device letters
	2009
关键词	Accelerometer gallium nitride (GaN) microelectromechanical system (MEMS) piezosensitivity sensor DEVICES
DOI	10.1109/LED.2009.2028905
英文摘要	In this letter, piezosensitive elements featuring large-size suspended gallium nitride (GaN) microstructures are fabricated with a two-step dry-release technique using the GaN-on-Si platform. The suspended microstructures are integrated with highly piezosensitive AlGaN/GaN heterostructures as sensing units to realize the GaN-based integrated microsensors. To characterize the residual-stress distribution of the fabricated microstructures, micro-Raman spectroscopy is employed. A microaccelerometer structure with a 250 x 250-mu m(2) proof-mass area is fabricated with the proposed fabrication technique, and the piezoresponse properties of the integrated sensing elements are characterized through bending experiment.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000270227600011&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; SCI(E); EI; 15; ARTICLE; 10; 1045-1047; 30
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152796]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Lv, Jianan,Yang, Zhenchuan,Yan, Guizhen,et al. Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform[J]. ieee electron device letters,2009.
APA	Lv, Jianan.,Yang, Zhenchuan.,Yan, Guizhen.,Lin, Wenkui.,Cai, Yong.,...&Chen, Kevin J..(2009).Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform.ieee electron device letters.
MLA	Lv, Jianan,et al."Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform".ieee electron device letters (2009).