Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN   high electron mobility transistors

doi:10.1063/1.3479928

CORC > 北京大学 > 信息科学技术学院

	Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors
	Gong, Rumin ; Wang, Jinyan ; Liu, Shenghou ; Dong, Zhihua ; Yu, Min ; Wen, Cheng P. ; Cai, Yong ; Zhang, Baoshun
刊名	应用物理学快报
	2010
关键词	aggregation aluminium aluminium compounds gallium compounds gold high electron mobility transistors III-V semiconductors nickel ohmic contacts rapid thermal annealing semiconductor-metal boundaries surface morphology surface roughness titanium transmission electron microscopy wide band gap semiconductors X-ray chemical analysis MICROSTRUCTURE RESISTANCE GAN
DOI	10.1063/1.3479928
英文摘要	A mechanism of the formation of the bulges on the surface of Ti/Al/Ni/Au Ohmic contact in AlGaN/GaN high electron mobility transistors is proposed. According to the analysis of TEM images and corresponding electron dispersive x-ray spectra, the bulges were found to consist of Ni-Al alloy in the body and Au-Al alloy surrounding. We deduce that the bulges were formed due to Ni-Al alloy aggregation in some local areas during the rapid thermal annealing process, which accounts for the rough surface morphology. (C) 2010 American Institute of Physics. [doi:10.1063/1.3479928]; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000280940900045&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Physics, Applied; SCI(E); EI; 32; ARTICLE; 6; 97
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152674]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Gong, Rumin,Wang, Jinyan,Liu, Shenghou,et al. Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors[J]. 应用物理学快报,2010.
APA	Gong, Rumin.,Wang, Jinyan.,Liu, Shenghou.,Dong, Zhihua.,Yu, Min.,...&Zhang, Baoshun.(2010).Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors.应用物理学快报.
MLA	Gong, Rumin,et al."Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors".应用物理学快报 (2010).