Contact length scaling in graphene field-effect transistors

doi:10.1063/1.3691629

CORC > 北京大学 > 信息科学技术学院

	Contact length scaling in graphene field-effect transistors
	Xu, Haitao ; Wang, Sheng ; Zhang, Zhiyong ; Wang, Zhenxing ; Xu, Huilong ; Peng, Lian-Mao
刊名	应用物理学快报
	2012
关键词	TRANSPORT DEVICES
DOI	10.1063/1.3691629
英文摘要	A study is performed on the contact length scaling in graphene field effect transistors. When the contact length (L-C) is below the transfer length (L-T), both transconductance and on-current increase rapidly with L-C due to the strengthened carrier injection. Over the transfer length, the transconductance keeps increasing prominently before coming to a saturation. A possible explanation is that larger contact length would induce deeper doping in graphene, and the nonlinear screening of metal-induced charge could modify the potential barrier, which subsequently adjusts the contact resistance and transconductance. In principle, the electron-hole asymmetry can be tuned via altering the contact lengths. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691629]; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000301655500076&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Physics, Applied; SCI(E); EI; 15; ARTICLE; 10; 100
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152503]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xu, Haitao,Wang, Sheng,Zhang, Zhiyong,et al. Contact length scaling in graphene field-effect transistors[J]. 应用物理学快报,2012.
APA	Xu, Haitao,Wang, Sheng,Zhang, Zhiyong,Wang, Zhenxing,Xu, Huilong,&Peng, Lian-Mao.(2012).Contact length scaling in graphene field-effect transistors.应用物理学快报.
MLA	Xu, Haitao,et al."Contact length scaling in graphene field-effect transistors".应用物理学快报 (2012).