Unified Scale Length for Four-Terminal Double-Gate MOSFETs | |
Zhou, Xingye ; Liu, Feng ; Zhang, Lining ; Wang, Cheng ; He, Jin ; Zhang, Xing ; Chan, Mansun | |
刊名 | ieee电子器件汇刊
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2012 | |
关键词 | Device design double-gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) scale length short-channel effects (SCEs) SOI |
DOI | 10.1109/TED.2012.2196520 |
英文摘要 | A unified scale length formula for four-terminal double-gate (DG) MOSFETs is proposed in this paper to provide a guideline for device design to obtain a practical threshold voltage and a subthreshold swing. By investigating the boundary conditions for Laplace's equation in the channel of DG MOSFETs, the evanescent-mode analysis method is extended to form a unified scaling scheme. The unified model is proved to be applicable to two common device structures: ultrathin-body silicon-on-insulator and symmetric DG MOSFETs based on 2-D technology computer-aided design simulation. With this model, the relationship among different well-known scaling rules can be well explained and understood.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000305622800027&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; SCI(E); EI; 1; ARTICLE; 7; 1997-1999; 59 |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/152467] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Zhou, Xingye,Liu, Feng,Zhang, Lining,et al. Unified Scale Length for Four-Terminal Double-Gate MOSFETs[J]. ieee电子器件汇刊,2012. |
APA | Zhou, Xingye.,Liu, Feng.,Zhang, Lining.,Wang, Cheng.,He, Jin.,...&Chan, Mansun.(2012).Unified Scale Length for Four-Terminal Double-Gate MOSFETs.ieee电子器件汇刊. |
MLA | Zhou, Xingye,et al."Unified Scale Length for Four-Terminal Double-Gate MOSFETs".ieee电子器件汇刊 (2012). |
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