Unified Scale Length for Four-Terminal Double-Gate MOSFETs

doi:10.1109/TED.2012.2196520

CORC > 北京大学 > 信息科学技术学院

	Unified Scale Length for Four-Terminal Double-Gate MOSFETs
	Zhou, Xingye ; Liu, Feng ; Zhang, Lining ; Wang, Cheng ; He, Jin ; Zhang, Xing ; Chan, Mansun
刊名	ieee电子器件汇刊
	2012
关键词	Device design double-gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) scale length short-channel effects (SCEs) SOI
DOI	10.1109/TED.2012.2196520
英文摘要	A unified scale length formula for four-terminal double-gate (DG) MOSFETs is proposed in this paper to provide a guideline for device design to obtain a practical threshold voltage and a subthreshold swing. By investigating the boundary conditions for Laplace's equation in the channel of DG MOSFETs, the evanescent-mode analysis method is extended to form a unified scaling scheme. The unified model is proved to be applicable to two common device structures: ultrathin-body silicon-on-insulator and symmetric DG MOSFETs based on 2-D technology computer-aided design simulation. With this model, the relationship among different well-known scaling rules can be well explained and understood.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000305622800027&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; SCI(E); EI; 1; ARTICLE; 7; 1997-1999; 59
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152467]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhou, Xingye,Liu, Feng,Zhang, Lining,et al. Unified Scale Length for Four-Terminal Double-Gate MOSFETs[J]. ieee电子器件汇刊,2012.
APA	Zhou, Xingye.,Liu, Feng.,Zhang, Lining.,Wang, Cheng.,He, Jin.,...&Chan, Mansun.(2012).Unified Scale Length for Four-Terminal Double-Gate MOSFETs.ieee电子器件汇刊.
MLA	Zhou, Xingye,et al."Unified Scale Length for Four-Terminal Double-Gate MOSFETs".ieee电子器件汇刊 (2012).