Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by   Oxygen Ion Loss Effect

doi:10.1109/LED.2013.2277916

CORC > 北京大学 > 信息科学技术学院

	Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect
	Chen, Bing ; Kang, Jin Feng ; Gao, Bin ; Deng, Ye Xin ; Liu, Li Feng ; Liu, Xiao Yan ; Fang, Zheng ; Yu, Hong Yu ; Wang, Xin Peng ; Lo, Guo Qiang ; Kwong, Dim Lee
刊名	ieee electron device letters
	2013
关键词	Endurance oxygen ion oxygen vacancy reliability resistive random access memory (RRAM) resistive switching RRAM
DOI	10.1109/LED.2013.2277916
英文摘要	In this letter, new endurance degradation behaviors in the bipolar resistive random access memory devices with multilayered HfOx/TiOx are reported for the first time, showing almost a constant resistance in low resistance state and a gradually reduced resistance in high resistance state (HRS). Further investigations into the dependence of HRSs degradation speed on switching voltage and temperature reveal that the degradation is attributed to the oxygen ion (O2-) loss effect during RESET process, which leads to the insufficient O2- supply for recombining the oxygen vacancies. Possible technical solutions are then proposed to improve the endurance performance.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000325186600029&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; SCI(E); EI; 9; ARTICLE; 10; 1292-1294; 34
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152254]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Chen, Bing,Kang, Jin Feng,Gao, Bin,et al. Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect[J]. ieee electron device letters,2013.
APA	Chen, Bing.,Kang, Jin Feng.,Gao, Bin.,Deng, Ye Xin.,Liu, Li Feng.,...&Kwong, Dim Lee.(2013).Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect.ieee electron device letters.
MLA	Chen, Bing,et al."Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect".ieee electron device letters (2013).