Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect | |
Chen, Bing ; Kang, Jin Feng ; Gao, Bin ; Deng, Ye Xin ; Liu, Li Feng ; Liu, Xiao Yan ; Fang, Zheng ; Yu, Hong Yu ; Wang, Xin Peng ; Lo, Guo Qiang ; Kwong, Dim Lee | |
刊名 | ieee electron device letters
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2013 | |
关键词 | Endurance oxygen ion oxygen vacancy reliability resistive random access memory (RRAM) resistive switching RRAM |
DOI | 10.1109/LED.2013.2277916 |
英文摘要 | In this letter, new endurance degradation behaviors in the bipolar resistive random access memory devices with multilayered HfOx/TiOx are reported for the first time, showing almost a constant resistance in low resistance state and a gradually reduced resistance in high resistance state (HRS). Further investigations into the dependence of HRSs degradation speed on switching voltage and temperature reveal that the degradation is attributed to the oxygen ion (O2-) loss effect during RESET process, which leads to the insufficient O2- supply for recombining the oxygen vacancies. Possible technical solutions are then proposed to improve the endurance performance.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000325186600029&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; SCI(E); EI; 9; ARTICLE; 10; 1292-1294; 34 |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/152254] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Chen, Bing,Kang, Jin Feng,Gao, Bin,et al. Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect[J]. ieee electron device letters,2013. |
APA | Chen, Bing.,Kang, Jin Feng.,Gao, Bin.,Deng, Ye Xin.,Liu, Li Feng.,...&Kwong, Dim Lee.(2013).Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect.ieee electron device letters. |
MLA | Chen, Bing,et al."Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect".ieee electron device letters (2013). |
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