Investigation on the Response of TaOx-based Resistive Random-Access   Memories to Heavy-Ion Irradiation

doi:10.1109/TNS.2013.2287615

CORC > 北京大学 > 信息科学技术学院

	Investigation on the Response of TaOx-based Resistive Random-Access Memories to Heavy-Ion Irradiation
	Tan, Fei ; Huang, Ru ; An, Xia ; Cai, Yimao ; Pan, Yue ; Wu, Weikang ; Feng, Hui ; Zhang, Xing ; Wang, YangYuan
刊名	ieee核科学汇刊
	2013
关键词	Heavy-ion irradiation HRS LRS RRAM DISPLACEMENT DAMAGE ELECTRICAL CHARACTERISTICS GALLIUM-ARSENIDE RADIATION SEMICONDUCTORS MEMRISTORS MOBILITY DEVICES
DOI	10.1109/TNS.2013.2287615
英文摘要	Impact of heavy-ion irradiation on the TaOx-based resistive random-access memory (RRAM) is investigated in this work. After Br ion irradiation, the set voltage of TaOx-based RRAM shows slight change, and negative shift of the forming voltage is observed. For the resistance change of TaOx-based RRAM devices induced by irradiation, the resistance of the low resistance state (LRS) illustrates acceptable change, while the resistance of the high resistance state (HRS) is quite sensitive to heavy ion irradation. Some irradiated devices even change from the HRS into the LRS, which results in disappeared memory window and may be attributed to the displacement damage in the dielectric layer. These results indicate that TaOx-based RRAM devices need to be carefully designed for future space applications.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000328967900067&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Nuclear Science & Technology; SCI(E); EI; 7; ARTICLE; 6; 4520-4525; 60
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152222]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Tan, Fei,Huang, Ru,An, Xia,et al. Investigation on the Response of TaOx-based Resistive Random-Access Memories to Heavy-Ion Irradiation[J]. ieee核科学汇刊,2013.
APA	Tan, Fei.,Huang, Ru.,An, Xia.,Cai, Yimao.,Pan, Yue.,...&Wang, YangYuan.(2013).Investigation on the Response of TaOx-based Resistive Random-Access Memories to Heavy-Ion Irradiation.ieee核科学汇刊.
MLA	Tan, Fei,et al."Investigation on the Response of TaOx-based Resistive Random-Access Memories to Heavy-Ion Irradiation".ieee核科学汇刊 (2013).