3-D Cross-Point Array Operation on AlOy/HfOx-Based Vertical Resistive   Switching Memory

doi:10.1109/TED.2014.2311655

CORC > 北京大学 > 信息科学技术学院

	3-D Cross-Point Array Operation on AlOy/HfOx-Based Vertical Resistive Switching Memory
	Gao, Bin ; Chen, Bing ; Liu, Rui ; Zhang, Feifei ; Huang, Peng ; Liu, Lifeng ; Liu, Xiaoyan ; Kang, Jinfeng ; Chen, Hong-Yu ; Yu, Shimeng ; Wong, H.S. Philip
刊名	ieee电子器件汇刊
	2014
关键词	3-D integration cross-point array resistive random access memory (RRAM) resistive switching
DOI	10.1109/TED.2014.2311655
英文摘要	A comprehensive array operation scheme for a multilayer stacked 3-D vertical resistive random access memory (RRAM) cross-point array architecture is developed. Based on the proposed READ/WRITE scheme, each memory cell in the 3-D array can be randomly accessed. The fabricated AlOy/HfOx-based bilayer vertical RRAM array with excellent device-to-device and layer-to-layer uniformity is applied to demonstrate the feasibility of the proposed operation scheme.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000337753300023&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; SCI(E); EI; 5; ARTICLE; gaobin@pku.edu.cn; bingchen@pku.edu.cn; liujing8851@163.com; skyhigh55@126.com; hp19881031@126.com; lfliu@pku.edu.cn; xyliu@ime.pku.edu.cn; kangjf@pku.edu.cn; hongyuc@stanford.edu; ysm1030@gmail.com; hspwong@stanford.edu; 5; 1377-1381; 61
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152104]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Gao, Bin,Chen, Bing,Liu, Rui,et al. 3-D Cross-Point Array Operation on AlOy/HfOx-Based Vertical Resistive Switching Memory[J]. ieee电子器件汇刊,2014.
APA	Gao, Bin.,Chen, Bing.,Liu, Rui.,Zhang, Feifei.,Huang, Peng.,...&Wong, H.S. Philip.(2014).3-D Cross-Point Array Operation on AlOy/HfOx-Based Vertical Resistive Switching Memory.ieee电子器件汇刊.
MLA	Gao, Bin,et al."3-D Cross-Point Array Operation on AlOy/HfOx-Based Vertical Resistive Switching Memory".ieee电子器件汇刊 (2014).