An analytical expression for predicting wearout lifetime of thin gate   and tunneling oxide

doi:10.1016/S0038-1101(01)00266-0

CORC > 北京大学 > 信息科学技术学院

	An analytical expression for predicting wearout lifetime of thin gate and tunneling oxide
	Xu, MZ ; Tan, CH
刊名	固体电子学
	2002
关键词	tunneling oxide defect hopping conduction intrinsic breakdown predicting wearout lifetime DEPENDENT DIELECTRIC-BREAKDOWN SILICON DIOXIDE FILMS MODEL FIELD RELIABILITY DEGRADATION CONDUCTION SIO2-FILMS MECHANISM STRESS
DOI	10.1016/S0038-1101(01)00266-0
英文摘要	In this paper, a physical model is presented for estimating the mean intrinsic breakdown time Of SiO2. Using a general compensation law and assuming that the current-voltage characteristic is dominated by modified Mott-Gurney hopping prior to breakdown, a simple analytical expression for predicting the mean intrinsic breakdown wearout lifetime of oxides can be obtained. The analytical results describe well the following features of the data, (1) a thermal acceleration factor which is a linear function of the stressing electric field and (2) a field acceleration factor that is proportional to reciprocal temperature. The existing closed form expression gives a good fit to experimentally obtained mean intrinsic breakdown time of oxides in the literature. (C) 2002 Elsevier Science Ltd. All rights reserved.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000173367200018&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; Physics, Condensed Matter; SCI(E); EI; 1; ARTICLE; 1; 115-121; 46
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152039]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xu, MZ,Tan, CH. An analytical expression for predicting wearout lifetime of thin gate and tunneling oxide[J]. 固体电子学,2002.
APA	Xu, MZ,&Tan, CH.(2002).An analytical expression for predicting wearout lifetime of thin gate and tunneling oxide.固体电子学.
MLA	Xu, MZ,et al."An analytical expression for predicting wearout lifetime of thin gate and tunneling oxide".固体电子学 (2002).