Suspended InAsnanowire gate-all-around field-effect transistors

doi:10.1063/1.4896105

CORC > 北京大学 > 信息科学技术学院

	Suspended InAsnanowire gate-all-around field-effect transistors
	Li, Qiang ; Huang, Shaoyun ; Pan, Dong ; Wang, Jingyun ; Zhao, Jianhua ; Xu, H. Q.
刊名	应用物理学快报
	2014
关键词	INAS NANOWIRE MOSFETS ELECTRON-MOBILITY QUANTUM DOTS WRAP-GATE PERFORMANCE DIAMETER
DOI	10.1063/1.4896105
英文摘要	Gate-all-around field-effect transistors are realized with thin, single-crystalline, pure-phase InAs nanowires grown by molecular beam epitaxy. At room temperature, the transistors show a desired high on-state current I-on of similar to 10 mu A arid an on-off current ratio I-on/I-off of as high as 10(6) at sourcedrain bias voltage of 50 mV and gate length of 1 mu m with a gate underlap spacing of 1 mu m from the source and from the drain. At low temperatures, the on-state current I-on is only slightly reduced, while the ratio I-on/I-off is increased to 10(7). The field-effect mobility in the nanowire channels is also investigated and found to be similar to 1500 cm(2)/V s at room temperature and similar to 2000 cm(2)/V s at low temperatures. The excellent performance of the transistors is explained in terms of strong electrostatic and quantum confinements of carriers in the nanowires. (C) 2014 A1P Publishing LLC.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000342995800073&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Physics, Applied; SCI(E); EI; 9; ARTICLE; syhuang@pku.edu.cn; hqxu@pku.edu.cn; 11; 105
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152015]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, Qiang,Huang, Shaoyun,Pan, Dong,et al. Suspended InAsnanowire gate-all-around field-effect transistors[J]. 应用物理学快报,2014.
APA	Li, Qiang,Huang, Shaoyun,Pan, Dong,Wang, Jingyun,Zhao, Jianhua,&Xu, H. Q..(2014).Suspended InAsnanowire gate-all-around field-effect transistors.应用物理学快报.
MLA	Li, Qiang,et al."Suspended InAsnanowire gate-all-around field-effect transistors".应用物理学快报 (2014).