Implementation of Fully Self-Aligned Homojunction Double-Gate a-IGZO   TFTs

doi:10.1109/LED.2014.2336232

CORC > 北京大学 > 信息科学技术学院

	Implementation of Fully Self-Aligned Homojunction Double-Gate a-IGZO TFTs
	He, Xin ; Wang, Longyan ; Xiao, Xiang ; Deng, Wei ; Zhang, Letao ; Chan, Mansun ; Zhang, Shengdong
刊名	ieee electron device letters
	2014
关键词	Amorphous indium-gallium-zinc-oxide (a-IGZO) double-gate self-aligned thin-film transistor (TFT) THIN-FILM TRANSISTORS
DOI	10.1109/LED.2014.2336232
英文摘要	A simple method of fabricating fully self-aligned double-gate (SADG) homojunction a-IGZO TFTs is proposed and experimentally demonstrated for the first time. The self-alignment between the bottom-and top-gates is realized with one backside-illuminated photolithographic step; and that between the source/drain regions and the two gates is formed by both argon plasma treatment and hydrogen doping. The resulting overlap between the gate and source/drain regions is about 0.3 m. Excellent symmetry between bidirectional transfer characteristics in the fabricated SADG TFTs is observed. Moreover, the dynamic threshold voltage operation is well demonstrated, and the driving capability, electrical stress effects under tied and separate gate biases are investigated.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000341574200012&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; SCI(E); EI; 1; ARTICLE; zhangsd@pku.edu.cn; 9; 927-929; 35
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152012]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, Xin,Wang, Longyan,Xiao, Xiang,et al. Implementation of Fully Self-Aligned Homojunction Double-Gate a-IGZO TFTs[J]. ieee electron device letters,2014.
APA	He, Xin.,Wang, Longyan.,Xiao, Xiang.,Deng, Wei.,Zhang, Letao.,...&Zhang, Shengdong.(2014).Implementation of Fully Self-Aligned Homojunction Double-Gate a-IGZO TFTs.ieee electron device letters.
MLA	He, Xin,et al."Implementation of Fully Self-Aligned Homojunction Double-Gate a-IGZO TFTs".ieee electron device letters (2014).