Trapped-Charge-Effect-Based Above-Threshold Current Expressions for   Amorphous Silicon TFTs Consistent With Pao-Sah Model

doi:10.1109/TED.2014.2358619

CORC > 北京大学 > 信息科学技术学院

	Trapped-Charge-Effect-Based Above-Threshold Current Expressions for Amorphous Silicon TFTs Consistent With Pao-Sah Model
	He, Hongyu ; He, Jin ; Deng, Wanling ; Wang, Hao ; Liu, Yuan ; Zheng, Xueren
刊名	ieee电子器件汇刊
	2014
关键词	Amorphous silicon (a-Si) thin-film transistor (TFT) threshold voltage trap states THIN-FILM TRANSISTORS FIELD-EFFECT TRANSISTORS PHYSICS SPICE
DOI	10.1109/TED.2014.2358619
英文摘要	Based on the charge analysis in the Pao-Sah model assuming the exponential deep and tail density of trap states (DOS), the above-threshold current expressions are presented. The trapped charge in the deep DOS is included in the threshold voltage. In particular, a trapped charge effect parameter beta, which is determined mainly by the tail DOS, is introduced into the current expressions. The parameter clarifies the relationship between the free electrons and the trapped electrons concentration, and shows the relationship between the band mobility mu(b) and the constant effective mobility mu(con). The expressions are consistent with the Pao-Sah model and verified by the experimental data. The different effects of the deep and tail DOS are clarified.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000344544200024&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; SCI(E); EI; 0; ARTICLE; hongyuhe2018@yahoo.com; frankhe@pku.edu.cn; dwanl@126.com; drwanghao@qq.com; liuyuan@ceprei.com; phxrzhen@scut.edu.cn; 11; 3744-3750; 61
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/151970]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, Hongyu,He, Jin,Deng, Wanling,et al. Trapped-Charge-Effect-Based Above-Threshold Current Expressions for Amorphous Silicon TFTs Consistent With Pao-Sah Model[J]. ieee电子器件汇刊,2014.
APA	He, Hongyu,He, Jin,Deng, Wanling,Wang, Hao,Liu, Yuan,&Zheng, Xueren.(2014).Trapped-Charge-Effect-Based Above-Threshold Current Expressions for Amorphous Silicon TFTs Consistent With Pao-Sah Model.ieee电子器件汇刊.
MLA	He, Hongyu,et al."Trapped-Charge-Effect-Based Above-Threshold Current Expressions for Amorphous Silicon TFTs Consistent With Pao-Sah Model".ieee电子器件汇刊 (2014).