Study of Low Frequency Noise Behavior in Silicon Nanowire Transistors Fabricated with Top-to-Down Approach | |
Zhuge, Jing ; Huang, Ru ; Wang, Runsheng ; Zhangi, Liangliang ; Kim, D.W. ; Park, Donggun ; Wang, Yangyuan | |
2008 | |
关键词 | 1/F NOISE RELIABILITY GATE MOSFETS |
英文摘要 | http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000279102800022&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; EI; CPCI-S(ISTP); 0 |
语种 | 英语 |
DOI标识 | 10.1109/SNW.2008.5418463 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/151938] |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Zhuge, Jing,Huang, Ru,Wang, Runsheng,et al. Study of Low Frequency Noise Behavior in Silicon Nanowire Transistors Fabricated with Top-to-Down Approach. 2008-01-01. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论