一种用于分离pMOS器件热载流子应力下氧化层陷阱电荷和界面陷阱电荷对阈值电压退化作用的方法; A Method to Separate Effects of Oxide-Trapped Charge and Interface-Trapped Charge on Threshold Voltage in pMOSFETs Under Hot-Carrier Stress | |
杨国勇 ; 王金延 ; 霍宗亮 ; 毛凌锋 ; 谭长华 ; 许铭真 | |
刊名 | 半导体学报 |
2003 | |
关键词 | MOS器件 氧化层陷阱 界面陷阱 热载流子退化 阈值电压 MOS device oxide trap interface trap hot-carrier degradation threshold voltage |
DOI | 10.3321/j.issn:0253-4177.2003.07.001 |
英文摘要 | 在电荷泵技术的基础上,提出了一种新的方法用于分离和确定氧化层陷阱电荷和界面陷阱电荷对pMOS器件热载流子应力下的阈值电压退化的作用,并且这种方法得到了实验的验证.结果表明对于pMOS器件退化存在三种机制:电子陷阱俘获、空穴陷阱俘获和界面陷阱产生.需要注意的是界面陷阱产生仍然是pMOS器件热载流子退化的主要机制,不过氧化层陷阱电荷的作用也不可忽视.; A simple new method based on the measurement of charge pumping technique is proposed to separate and quantify experimentally the effects of oxide-trapped charges and interface-trapped charges on threshold voltage degradation in p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) under hot-carrier stress.Further,the experimental results verify the validness of this method.It is shown that,all three mechanisms of electron trapping effect,hole trapping effect and interface trap generation play important roles in p-channel MOSFETs degradation.It is noted that interface-trapped charge is still the dominant mechanism for hot-carrier-induced degradation in p-channel MOSFETs,while a significant contribution of oxide-trapped charge to threshold voltage is demonstrated and quantified.; 国家重点基础研究发展计划(973计划); 中文核心期刊要目总览(PKU); 中国科学引文数据库(CSCD); 0; 7; 673-679; 24 |
语种 | 中文 |
内容类型 | 期刊论文 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/24310] |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | 杨国勇,王金延,霍宗亮,等. 一种用于分离pMOS器件热载流子应力下氧化层陷阱电荷和界面陷阱电荷对阈值电压退化作用的方法, A Method to Separate Effects of Oxide-Trapped Charge and Interface-Trapped Charge on Threshold Voltage in pMOSFETs Under Hot-Carrier Stress[J]. 半导体学报,2003. |
APA | 杨国勇,王金延,霍宗亮,毛凌锋,谭长华,&许铭真.(2003).一种用于分离pMOS器件热载流子应力下氧化层陷阱电荷和界面陷阱电荷对阈值电压退化作用的方法.半导体学报. |
MLA | 杨国勇,et al."一种用于分离pMOS器件热载流子应力下氧化层陷阱电荷和界面陷阱电荷对阈值电压退化作用的方法".半导体学报 (2003). |
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