热载流子应力下超薄栅pMOS器件氧化层陷阱电荷的表征

doi:10.3321/j.issn:0253-4177.2003.03.003

CORC > 北京大学 > 信息科学技术学院

	热载流子应力下超薄栅pMOS器件氧化层陷阱电荷的表征; Characterization of Oxide Charge During Hot-Carrier Degradation of Ultrathin Gate pMOSFETs--Investigated by Charge Pumping Technique
	杨国勇 ; 王金延 ; 霍宗亮 ; 毛凌锋 ; 谭长华 ; 许铭真
刊名	半导体学报
	2003
关键词	MOS结构氧化层陷阱热载流子退化 MOS structure oxid trap hot-carrier degradation
DOI	10.3321/j.issn:0253-4177.2003.03.003
英文摘要	利用电荷泵技术研究了4nm pMOSFET的热载流子应力下氧化层陷阱电荷的产生行为.首先,对于不同沟道长度下的热载流子退化,通过直接的实验证据,发现空穴陷阱俘获特性与应力时间呈对数关系.然后对不同应力电压、不同沟道长度下氧化层陷阱电荷(包括空穴和电子陷阱俘获)的产生做了进一步的分析.发现对于pMOSFET的热载流子退化,氧化层陷阱电荷产生分两步过程:在较短的应力初期,电子陷阱俘获是主要机制;而随着应力时间增加,空穴陷阱俘获作用逐渐显著,最后主导了氧化层陷阱电荷的产生.; The generation of oxide charge for 4nm pMOSFETs under hot-carrier stress is investigated by the charge pumping measurements.Firstly,the direct experimental evidences of logarithmic time dependence of hole trapping is observed for pMOSFETs with different channel lengths under hot-carrier stress.Thus,the relationships of oxide charge generation,including electron trapping and hole trapping effects,with different stress voltages and channel lengths are analyzed.It is also found that there is a two-step process in the generation of oxide charge for pMOSFETs.For a short stress time,electron trapping is predominant,whereas for a long stress time,hole trapping dominates the generation of oxide charge.; 国家重点基础研究发展计划(973计划); 中文核心期刊要目总览(PKU); 中国科学引文数据库(CSCD); 0; 3; 238-244; 24
语种	中文
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/24067]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	杨国勇,王金延,霍宗亮,等. 热载流子应力下超薄栅pMOS器件氧化层陷阱电荷的表征, Characterization of Oxide Charge During Hot-Carrier Degradation of Ultrathin Gate pMOSFETs--Investigated by Charge Pumping Technique[J]. 半导体学报,2003.
APA	杨国勇,王金延,霍宗亮,毛凌锋,谭长华,&许铭真.(2003).热载流子应力下超薄栅pMOS器件氧化层陷阱电荷的表征.半导体学报.
MLA	杨国勇,et al."热载流子应力下超薄栅pMOS器件氧化层陷阱电荷的表征".半导体学报 (2003).