超薄栅MOS器件热载流子应力下SILC的产生机制

doi:10.3321/j.issn:0253-4177.2003.06.004

CORC > 北京大学 > 信息科学技术学院

	超薄栅MOS器件热载流子应力下SILC的产生机制; Experimental Evidence of Interface-Trap-Related SILC in Ultrathin (4nm- and 2.5nm-Thick) n-MOSFET and p-MOSFET Under Hot-Carrier Stress
	杨国勇 ; 霍宗亮 ; 王金延 ; 毛凌锋 ; 王子欧 ; 谭长华 ; 许铭真
刊名	半导体学报
	2003
关键词	应力感应漏电流热载流子应力超薄栅氧化层 MOS器件 SILC hot carrier stress ultra-thin gate oxide MOSFET
DOI	10.3321/j.issn:0253-4177.2003.06.004
英文摘要	通过测量界面陷阱的产生,研究了超薄栅nMOS和pMOS器件在热载流子应力下的应力感应漏电流(SILC).在实验结果的基础上,发现对于不同器件类型(n沟和p沟)、不同沟道长度(1、0.5、0.275和0.135μm)、不同栅氧化层厚度(4和2.5nm),热载流子应力后的SILC产生和界面陷阱产生之间均存在线性关系.这些实验证据表明MOS器件减薄后,SILC的产生与界面陷阱关系非常密切.; Stress-induced leakage current (SILC) of ultrathin gate oxide is investigated by observing the generation of interface traps for n-MOSFET and p-MOSFET under hot-carrier stress.It is found experimentally that there is linear correlation between the generation of interface traps and SILC for both types of MOSFET with different channel lengths (including 1,0.5,0.275,and 0.135μm) and different gate oxide thickness (4nm and 2.5nm).These experimental evidences show that the SILC has a strong dependence on interface traps.; 国家重点基础研究发展计划(973计划); 中文核心期刊要目总览(PKU); 中国科学引文数据库(CSCD); 0; 6; 579-585; 24
语种	中文
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/22948]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	杨国勇,霍宗亮,王金延,等. 超薄栅MOS器件热载流子应力下SILC的产生机制, Experimental Evidence of Interface-Trap-Related SILC in Ultrathin (4nm- and 2.5nm-Thick) n-MOSFET and p-MOSFET Under Hot-Carrier Stress[J]. 半导体学报,2003.
APA	杨国勇.,霍宗亮.,王金延.,毛凌锋.,王子欧.,...&许铭真.(2003).超薄栅MOS器件热载流子应力下SILC的产生机制.半导体学报.
MLA	杨国勇,et al."超薄栅MOS器件热载流子应力下SILC的产生机制".半导体学报 (2003).