Enhancement-mode thin film transistor with nitrogen-doped ZnO channel layer deposited by laser molecular beam epitaxy

CORC > 西安光学精密机械研究所 > 中国科学院西安光学精密机械研究所 > 瞬态光学技术国家重点实验室

	Enhancement-mode thin film transistor with nitrogen-doped ZnO channel layer deposited by laser molecular beam epitaxy
	Zhang, Xin-An 1,2; Zhang, Jing-Wen 1; Zhang, Wei-Feng 2; Wang, Dong 1; Bi, Zhen 1; Bian, Xu-Ming 1; Hou, Xun 1,2,3,4
刊名	thin solid films
	2008-03-31
卷号	516 期号:10 页码:3305-3308
关键词	L-MBE zinc oxide thin film transistor doping
ISSN号	0040-6090
英文摘要	the thin film transistors (tfts) based on nitrogen doped zinc oxide (zno) were investigated by laser molecular beam epitaxy. the increase of zno films' resistivity by nitrogen doping was found and applied in enhancement mode zno-tfts. the zno-tfts with a conventional bottom-gate structure were fabricated on thermally oxidized p-type silicon substrate. electrical measurement has revealed that the devices operate as an n-channel enhancement mode and exhibit an on/off ratio of 10(4). the threshold voltage is 5.15 v. the channel mobility on the order of 2.66 cm(2) v-1 s(-1) has been determined. (c) 2007 elsevier b.v. all rights reserved.
学科主题	数理科学和化学
WOS标题词	science & technology ; technology ; physical sciences
类目[WOS]	materials science, multidisciplinary ; materials science, coatings & films ; physics, applied ; physics, condensed matter
研究领域[WOS]	materials science ; physics
关键词[WOS]	low-temperature
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000254634600079
公开日期	2011-09-30
内容类型	期刊论文
源URL	[http://ir.opt.ac.cn/handle/181661/11009]
专题	西安光学精密机械研究所_瞬态光学技术国家重点实验室
作者单位	1.Xian Jiaotong Univ, Key Lab Photon Technol Informat, Xian 710049, Peoples R China 2.Henan Univ, Sch Phys & Elect, Kaifeng 475001, Peoples R China 3.Xian Jiaotong Univ, Key Lab Phys Elect & Dev Under Minist Educ, Xian 710049, Peoples R China 4.Chinese Acad Sci, Xian Inst Opt & Prec Mech, State Key Lab Transient Opt & Photon, Xian 710068, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Xin-An,Zhang, Jing-Wen,Zhang, Wei-Feng,et al. Enhancement-mode thin film transistor with nitrogen-doped ZnO channel layer deposited by laser molecular beam epitaxy[J]. thin solid films,2008,516(10):3305-3308.
APA	Zhang, Xin-An.,Zhang, Jing-Wen.,Zhang, Wei-Feng.,Wang, Dong.,Bi, Zhen.,...&Hou, Xun.(2008).Enhancement-mode thin film transistor with nitrogen-doped ZnO channel layer deposited by laser molecular beam epitaxy.thin solid films,516(10),3305-3308.
MLA	Zhang, Xin-An,et al."Enhancement-mode thin film transistor with nitrogen-doped ZnO channel layer deposited by laser molecular beam epitaxy".thin solid films 516.10(2008):3305-3308.