Self-Terminating Confinement Approach for Large-Area Uniform Monolayer   Graphene Directly over Si/SiOX by Chemical Vapor Deposition

doi:10.1021/acsnano.6b08069

CORC > 北京大学 > 化学与分子工程学院

	Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/SiOX by Chemical Vapor Deposition
	Pang, Jinbo ; Mendes, Rafael G. ; Wrobel, Pawel S. ; Wlodarski, Michal D. ; Ta, Huy Quang ; Zhao, Liang ; Giebeler, Lars ; Trzebicka, Barbara ; Gemming, Thomas ; Fu, Lei ; Liu, Zhongfan ; Eckert, Juergen ; Bachmatiuk, Alicja ; Ruemmeli, Mark H.
刊名	ACS NANO
	2017
关键词	direct monolayer graphene growth uniform graphene chemical vapor deposition silicon grain boundaries optical transmission carrier mobility FIELD-EFFECT TRANSISTORS SINGLE-CRYSTAL GRAPHENE HIGH-QUALITY CARBON NANOTUBES LAYER GRAPHENE DIRECT GROWTH POLYCRYSTALLINE GRAPHENE ELECTRICAL-PROPERTIES BILAYER GRAPHENE GRAIN-BOUNDARIES
DOI	10.1021/acsnano.6b08069
英文摘要	To synthesize graphene by chemical vapor deposition (CVD) both in large area and with uniform layer number directly over Si/SiOx has proven challenging. The use of catalytically active metal substrates, in particular Cu, has shown far greater success and CVD therefore is popular. That said, for electronics applications it requires a transfer procedure, which tends to damage and contaminate the graphene. Thus, the direct fabrication of uniform graphene on Si/ SiO, remains attractive. Here we show a facile confinement CVD approach in which we simply "sandwich" two Si wafers with their oxide faces in contact to form uniform monolayer graphene. A thorough examination of the material reveals it comprises faceted grains despite initially nucleating as round islands. Upon clustering, they facet to minimize their energy. This behavior leads to faceting in polygons, as the system aims to ideally form hexagons, the lowest energy form, much like the hexagonal cells in a beehive, which requires the minimum wax. This process also leads to a near minimal total grain boundary length per unit area. This fact, along with the high graphene quality, is reflected in its electrical performance, which is highly comparable with graphene formed over other substrates, including Cu. In addition, the graphene growth is self -terminating. Our CVD approach is easily scalable and will make graphene formation directly on Si wafers competitive against that from metal substrates, which suffer from transfer. Moreover, this CVD route should be applicable for the direct synthesis of other 2D materials and their van der Waals heterostructures.; Sino-German Center for Research Promotion [GZ 871]; IFW Dresden, Germany; CMPW (Centre of Polymer and Carbon Materials, Polish Academy of Sciences), Poland; Soochow University; National Science Center [2014/13/D/ST5/02853]; National Science Center Opus Program [2015/19/B/STS/03399]; National Science Foundation China (NSFC) [51672181]; SCI(E); ARTICLE; 2; 1946-1956; 11
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/475400]
专题	化学与分子工程学院
推荐引用方式 GB/T 7714	Pang, Jinbo,Mendes, Rafael G.,Wrobel, Pawel S.,et al. Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/SiOX by Chemical Vapor Deposition[J]. ACS NANO,2017.
APA	Pang, Jinbo.,Mendes, Rafael G..,Wrobel, Pawel S..,Wlodarski, Michal D..,Ta, Huy Quang.,...&Ruemmeli, Mark H..(2017).Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/SiOX by Chemical Vapor Deposition.ACS NANO.
MLA	Pang, Jinbo,et al."Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/SiOX by Chemical Vapor Deposition".ACS NANO (2017).