Strong Adlayer-Substrate Interactions &quot;Break&quot; the Patching Growth of   h-BN onto Graphene on Re(0001)

doi:10.1021/acsnano.6b07773

CORC > 北京大学 > 化学与分子工程学院

	Strong Adlayer-Substrate Interactions "Break" the Patching Growth of h-BN onto Graphene on Re(0001)
	Qi, Yue ; Han, Nannan ; Li, Yuanchang ; Zhang, Zhepeng ; Zhou, Xiebo ; Deng, Bing ; Li, Qiucheng ; Liu, Mengxi ; Zhao, Jijun ; Liu, Zhongfan ; Zhang, Yanfeng
刊名	ACS NANO
	2017
关键词	graphene and hexagonal boron nitride heterostructures ultra-high-vacuum scanning tunneling microscopy/spectroscopy preferable nucleation edges of Re steps and graphene domains HEXAGONAL BORON-NITRIDE DER-WAALS HETEROSTRUCTURES CHEMICAL-VAPOR-DEPOSITION LIGHT-EMITTING-DIODES INPLANE HETEROSTRUCTURES ELECTRONIC-PROPERTIES MOLYBDENUM-DISULFIDE ATOMIC LAYERS INTERFACE BOUNDARY
DOI	10.1021/acsnano.6b07773
英文摘要	Hetero-epitaxial growth of hexagonal boron nitride (h-BN) from the edges of graphene domains or vice versa has been widely observed during synthesis of in-plane heterostructures of h-BN-G on Rh(111), Ir(111), and even Cu foil. We report that, on a strongly coupled Re(0001) substrate via a similar two-step sequential growth strategy, h-BN preferably nucleated on the edges of Re(0001) steps rather than on the edges of existing graphene domains. Statistically, one-third of the domain boundaries of graphene and h-BN were patched seamlessly, and the others were characterized by obvious "defect lines" when the total coverage approached a full monolayer. This imperfect merging behavior can be explained by translational misalignment and lattice mismatch of the resulting separated component domains. According to density functional theory calculations, this coexisting patching and non-patching growth behavior was radically mediated by the strong adlayer substrate (A-S) interactions, as well as the disparate formation energies of the attachment of B-N pairs or B-N lines along the edges of the Re(0001) steps versus the graphene domains. This work will be of fundamental significance for the controllable synthesis of in-plane heterostructures constructed from two-dimensional layered materials with consideration of A-S interactions.; National Key Research and Development Program of China [2016YFA0200103]; National Natural Science Foundation of China [51290272, 51472008, 51432002, 50121091, 21201012]; National Basic Research Program of China [2013CB932603, 2012CB933404, 2014CB921002]; Open Research Fund Program of the State Key Laboratory of Low Dimensional Quantum Physics [KF201601]; Open Research Fund Program of State Key Laboratory of Coal-based Low-carbon Energy (ENN Group Co., Ltd.), Langfang, China; SCI(E); ARTICLE; 2; 1807-1815; 11
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/475398]
专题	化学与分子工程学院工学院
推荐引用方式 GB/T 7714	Qi, Yue,Han, Nannan,Li, Yuanchang,et al. Strong Adlayer-Substrate Interactions "Break" the Patching Growth of h-BN onto Graphene on Re(0001)[J]. ACS NANO,2017.
APA	Qi, Yue.,Han, Nannan.,Li, Yuanchang.,Zhang, Zhepeng.,Zhou, Xiebo.,...&Zhang, Yanfeng.(2017).Strong Adlayer-Substrate Interactions "Break" the Patching Growth of h-BN onto Graphene on Re(0001).ACS NANO.
MLA	Qi, Yue,et al."Strong Adlayer-Substrate Interactions "Break" the Patching Growth of h-BN onto Graphene on Re(0001)".ACS NANO (2017).