Substrate Doping Effect and Unusually Large Angle van Hove Singularity   Evolution in Twisted Bi- and Multilayer Graphene

doi:10.1002/adma.201606741

CORC > 北京大学 > 化学与分子工程学院

	Substrate Doping Effect and Unusually Large Angle van Hove Singularity Evolution in Twisted Bi- and Multilayer Graphene
	Peng, Han ; Schroter, Niels B. M. ; Yin, Jianbo ; Wang, Huan ; Chung, Ting-Fung ; Yang, Haifeng ; Ekahana, Sandy ; Liu, Zhongkai ; Jiang, Juan ; Yang, Lexian ; Zhang, Teng ; Chen, Cheng ; Ni, Heng ; Barinov, Alexey ; Chen, Yong P. ; Liu, Zhongfan ; Peng, Hailin ; Chen, Yulin
刊名	ADVANCED MATERIALS
	2017
关键词	micro-ARPES substrate doping effect twisted bilayer graphene van Hove singularity BILAYER GRAPHENE TRANSISTORS
DOI	10.1002/adma.201606741
英文摘要	Graphene has demonstrated great potential in new-generation electronic applications due to its unique electronic properties such as large carrier Fermi velocity, ultrahigh carrier mobility, and high material stability. Interestingly, the electronic structures can be further engineered in multilayer graphene by the introduction of a twist angle between different layers to create van Hove singularities (vHSs) at adjustable binding energy. In this work, using angle-resolved photoemission spectroscopy with sub-micrometer spatial resolution, the band structures and their evolution are systematically studied with twist angle in bilayer and trilayer graphene sheets. A doping effect is directly observed in graphene multilayer system as well as vHSs in bilayer graphene over a wide range of twist angles (from 5 degrees to 31 degrees) with wide tunable energy range over 2 eV. In addition, the formation of multiple vHSs (at different binding energies) is also observed in trilayer graphene. The large tuning range of vHS binding energy in twisted multilayer graphene provides a promising material base for optoelectrical applications with broadband wavelength selectivity from the infrared to the ultraviolet regime, as demonstrated by an example application of wavelength selective photodetector.; EPSRC (UK) [EP/M020517/1]; Hefei Science Center CAS [2015HSC-UE013]; China Scholarship Council; Studienstiftung des deutschen Volkes; SCI(E); ARTICLE; 27; 29
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/472086]
专题	化学与分子工程学院
推荐引用方式 GB/T 7714	Peng, Han,Schroter, Niels B. M.,Yin, Jianbo,et al. Substrate Doping Effect and Unusually Large Angle van Hove Singularity Evolution in Twisted Bi- and Multilayer Graphene[J]. ADVANCED MATERIALS,2017.
APA	Peng, Han.,Schroter, Niels B. M..,Yin, Jianbo.,Wang, Huan.,Chung, Ting-Fung.,...&Chen, Yulin.(2017).Substrate Doping Effect and Unusually Large Angle van Hove Singularity Evolution in Twisted Bi- and Multilayer Graphene.ADVANCED MATERIALS.
MLA	Peng, Han,et al."Substrate Doping Effect and Unusually Large Angle van Hove Singularity Evolution in Twisted Bi- and Multilayer Graphene".ADVANCED MATERIALS (2017).