Atomic hydrogen induced defect kinetics in amorphous silicon

doi:10.1116/1.4987152

CORC > 北京大学 > 化学与分子工程学院

	Atomic hydrogen induced defect kinetics in amorphous silicon
	Peeters, Floran J. J. ; Zheng, Jie ; Aarts, Igor M. P. ; Pipino, Andrew C. R. ; Kessels, Wilhelmus M. M. ; van de Sanden, Mauritius C. M.
刊名	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
	2017
关键词	A-SI-H HOT-WIRE DEPOSITION TIME SPECTROSCOPIC ELLIPSOMETRY CAVITY RINGDOWN SPECTROSCOPY MICROCRYSTALLINE SILICON THIN-FILMS INFRARED-SPECTROSCOPY SI(100) SURFACES DANGLING BONDS CRYSTALLINE SILICON
DOI	10.1116/1.4987152
英文摘要	Near-infrared evanescent-wave cavity ring-down spectroscopy (CRDS) has been applied to study the defect evolution in an amorphous silicon (a-Si: H) thin film subjected to a directed beam of atomic H with a flux of (0.4-2) x 10(14) cm(-2) s(-1). To this end, a 42 +/- 62 nm a-Si: H film was grown on the total internal reflection surface of a folded miniature optical resonator by hot-wire chemical vapor deposition. A fully reversible defect creation process is observed, with a nonlinear dependence on H flux, with a time resolution of 33 ms and a relative sensitivity of 10(-7). Using polarizing optics, the CRDS signal was split into s-and p-polarized components, which, combined with E-field calculations, provides depth sensitivity. Extensive kinetic modeling of the observed process is used to determine rate constants for the hydrogen-material interactions and defect formation in aSi: H, as well as revealing a high diffusion coefficient for atomic H on the order of 10(-11) cm(2) s(-1). A novel reaction pathway is proposed, whereby H inserted into weak Si-Si bonds recombines with mobile H, resulting in a limited penetration depth for atomic H from the gas-phase on the order of 10(-15) nm. (C) 2017 American Vacuum Society.; SCI(E); ARTICLE; 5; 35
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/471075]
专题	化学与分子工程学院
推荐引用方式 GB/T 7714	Peeters, Floran J. J.,Zheng, Jie,Aarts, Igor M. P.,et al. Atomic hydrogen induced defect kinetics in amorphous silicon[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,2017.
APA	Peeters, Floran J. J.,Zheng, Jie,Aarts, Igor M. P.,Pipino, Andrew C. R.,Kessels, Wilhelmus M. M.,&van de Sanden, Mauritius C. M..(2017).Atomic hydrogen induced defect kinetics in amorphous silicon.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A.
MLA	Peeters, Floran J. J.,et al."Atomic hydrogen induced defect kinetics in amorphous silicon".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2017).