First Fiber-Shaped Non-Volatile Memory Device Based on Hybrid   Organic-Inorganic Perovskite

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	First Fiber-Shaped Non-Volatile Memory Device Based on Hybrid Organic-Inorganic Perovskite
	Yan, Kai ; Chen, Buxin ; Hu, Hsienwei ; Chen, Si ; Dong, Bin ; Gao, Xue ; Xiao, Xinyu ; Zhou, Jingbo ; Zou, Dechun
刊名	ADVANCED ELECTRONIC MATERIALS
	2016
关键词	RESISTIVE SWITCHING BEHAVIOR HIGH-PERFORMANCE WEARABLE ELECTRONICS FLEXIBLE FIBER SOLAR-CELLS EFFICIENCY LAYERS NANOWIRES SENSOR
DOI	10.1002/aelm.201600160
英文摘要	National Natural Science Foundation of China [51573004, 91333107]; Ministry of Science and Technology of China [2011CB933300]; Ministry of Education of China [20120001140010]; SCI(E); ARTICLE; dczou@pku.edu.cn; 8; 2
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/456957]
专题	化学与分子工程学院
推荐引用方式 GB/T 7714	Yan, Kai,Chen, Buxin,Hu, Hsienwei,et al. First Fiber-Shaped Non-Volatile Memory Device Based on Hybrid Organic-Inorganic Perovskite[J]. ADVANCED ELECTRONIC MATERIALS,2016.
APA	Yan, Kai.,Chen, Buxin.,Hu, Hsienwei.,Chen, Si.,Dong, Bin.,...&Zou, Dechun.(2016).First Fiber-Shaped Non-Volatile Memory Device Based on Hybrid Organic-Inorganic Perovskite.ADVANCED ELECTRONIC MATERIALS.
MLA	Yan, Kai,et al."First Fiber-Shaped Non-Volatile Memory Device Based on Hybrid Organic-Inorganic Perovskite".ADVANCED ELECTRONIC MATERIALS (2016).