Improved Blue-Emitting AlN:Eu2+ Phosphors by Alloying with GaN

doi:10.1111/jace.13845

CORC > 北京大学 > 化学与分子工程学院

	Improved Blue-Emitting AlN:Eu2+ Phosphors by Alloying with GaN
	Yin, Liang-Jun ; Chen, Guo-Zhang ; Zhou, Zheng-Yang ; Jian, Xian ; Xu, Bao ; He, Ji-Hua ; Tang, Hui ; Luan, Chun-Hong ; Xu, Xin ; van Ommen, J. Ruud ; Hintzen, Hubertus T.
刊名	JOURNAL OF THE AMERICAN CERAMIC SOCIETY
	2015
关键词	HIGH THERMAL-STABILITY WHITE LEDS PHOTOLUMINESCENCE BAND CATHODOLUMINESCENCE LUMINESCENCE TEMPERATURE ALXGA1-XN EMISSION SI
DOI	10.1111/jace.13845
英文摘要	A method is designed to improve the luminescence of AlN-based phosphors by tuning the band structure and crystal structure due to alloying with GaN. The pure (Al,Ga) N:Eu phosphors were initially prepared by gas-phase reaction in an NH3 atmosphere. GaN alloying was used to expand the crystal lattice of AlN due to Ga3+ substituting for smaller Al3+ ions, making dissolution of Eu2+ easier. The dissolution of Ga in the AlN lattice was proven by the result of the Rietveld refinement and the increase in lattice parameters with increasing Ga content. To introduce other energy states mixing with the 5d states of Eu2+, Ga doping was also used to tune the band structure of AlN by acting on Eu2+ ions. The theoretical result was analyzed using the Cambridge Sequential Total Energy Package (CASTEP). According to the calculated total and atom resolved partial density of states, it was observed that the Ga 5p states contribute a large portion to the corresponding Eu2+ absorption band in (Al, Ga) N:Eu phosphors. As a consequence, an enhanced emission intensity at 470 nm and a high quantum efficiency for excitation at 330 nm was obtained despite of stronger thermal quenching of the (Al, Ga) N:Eu phosphors compared with AlN:Eu.; National Natural Science Foundation of China [51302029, 51402040, 51402045]; Open Foundation of the State Key Laboratory of Electronic Thin Films and Integrated Devices [KFJJ201411]; Grant Agency of the Czech Republic; Academy of Sciences of the Czech Republic; SCI(E); EI; ARTICLE; ylj@mail.ustc.edu.cn; h.t.hintzen@tudelft.nl; 12; 3897-3904; 98
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/435736]
专题	化学与分子工程学院
推荐引用方式 GB/T 7714	Yin, Liang-Jun,Chen, Guo-Zhang,Zhou, Zheng-Yang,et al. Improved Blue-Emitting AlN:Eu2+ Phosphors by Alloying with GaN[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY,2015.
APA	Yin, Liang-Jun.,Chen, Guo-Zhang.,Zhou, Zheng-Yang.,Jian, Xian.,Xu, Bao.,...&Hintzen, Hubertus T..(2015).Improved Blue-Emitting AlN:Eu2+ Phosphors by Alloying with GaN.JOURNAL OF THE AMERICAN CERAMIC SOCIETY.
MLA	Yin, Liang-Jun,et al."Improved Blue-Emitting AlN:Eu2+ Phosphors by Alloying with GaN".JOURNAL OF THE AMERICAN CERAMIC SOCIETY (2015).