Physical vapor deposition synthesis of two-dimensional orthorhombic SnS   flakes with strong angle/temperature-dependent Raman responses

doi:10.1039/c5nr07675g

CORC > 北京大学 > 化学与分子工程学院

	Physical vapor deposition synthesis of two-dimensional orthorhombic SnS flakes with strong angle/temperature-dependent Raman responses
	Xia, Jing ; Li, Xuan-Ze ; Huang, Xing ; Mao, Nannan ; Zhu, Dan-Dan ; Wang, Lei ; Xu, Hua ; Meng, Xiang-Min
刊名	NANOSCALE
	2016
关键词	LAYER BLACK PHOSPHORUS FIELD-EFFECT TRANSISTORS DISULFIDE ATOMIC LAYERS ION BATTERIES GRAPHENE GROWTH SPECTROSCOPY ORIENTATION TRANSPORT SPECTRA
DOI	10.1039/c5nr07675g
英文摘要	Anisotropic layered semiconductors have attracted significant interest due to the huge possibility of bringing new functionalities to thermoelectric, electronic and optoelectronic devices. Currently, most reports on anisotropy have concentrated on black phosphorus and ReS2, less effort has been contributed to other layered materials. In this work, two-dimensional (2D) orthorhombic SnS flakes on a large scale have been successfully synthesized via a simple physical vapor deposition method. Angle-dependent Raman spectroscopy indicated that the orthorhombic SnS flakes possess a strong anisotropic Raman response. Under a parallel-polarization configuration, the peak intensity of A(g) (190.7 cm(-1)) Raman mode reaches the maximum when incident light polarization is parallel to the armchair direction of the 2D SnS flakes, which strongly suggests that the Ag (190.7 cm(-1)) mode can be used to determine the crystallographic orientation of the 2D SnS. In addition, temperature-dependent Raman characterization confirmed that the 2D SnS flakes have a higher sensitivity to temperature than graphene, MoS2 and black phosphorus. These results are useful for the future studies of the optical and thermal properties of 2D orthorhombic SnS.; Chinese Academy of Sciences [XDA09040203]; 973 Project [2012CB932401]; SCI(E); EI; PubMed; ARTICLE; mengxiangmin@mail.ipc.ac.cn; 4; 2063-2070; 8
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/435722]
专题	化学与分子工程学院
推荐引用方式 GB/T 7714	Xia, Jing,Li, Xuan-Ze,Huang, Xing,et al. Physical vapor deposition synthesis of two-dimensional orthorhombic SnS flakes with strong angle/temperature-dependent Raman responses[J]. NANOSCALE,2016.
APA	Xia, Jing.,Li, Xuan-Ze.,Huang, Xing.,Mao, Nannan.,Zhu, Dan-Dan.,...&Meng, Xiang-Min.(2016).Physical vapor deposition synthesis of two-dimensional orthorhombic SnS flakes with strong angle/temperature-dependent Raman responses.NANOSCALE.
MLA	Xia, Jing,et al."Physical vapor deposition synthesis of two-dimensional orthorhombic SnS flakes with strong angle/temperature-dependent Raman responses".NANOSCALE (2016).