Controlled Synthesis of ZrS2 Mono layer and Few Layers on Hexagonal   Boron Nitride

doi:10.1021/jacs.5b03807

CORC > 北京大学 > 化学与分子工程学院

	Controlled Synthesis of ZrS2 Mono layer and Few Layers on Hexagonal Boron Nitride
	Zhang, Mei ; Zhu, Yiming ; Wang, Xinsheng ; Feng, Qingliang ; Qiao, Shanlin ; Wen, Wen ; Chen, Yanfeng ; Cui, Menghua ; Zhang, Jin ; Cai, Congzhong ; Xie, Liming
刊名	JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
	2015
关键词	TRANSITION-METAL DICHALCOGENIDES CHEMICAL-VAPOR-DEPOSITION FIELD-EFFECT TRANSISTORS BAND-GAP ELECTRICAL-TRANSPORT OPTICAL-PROPERTIES ATOMIC LAYERS GROWTH MOS2 MONOLAYER
DOI	10.1021/jacs.5b03807
英文摘要	Group IVB transition metal (Zr and HO dichalcogenide (TMD) monolayers can have higher carrier mobility and higher tunneling current density than group VLB (Mo and W) TMD monolayers. Here we report the synthesis of hexagonal ZrS2 monolayer and few layers on hexagonal boron nitride (BN) using ZrCl4 and S as precursors. The domain size of ZrS2 hexagons is around 1-3 mu m. The number of layers of ZrS2 was controlled by tuning the evaporation temperature of ZrCl4. The stacking angle between ZrS, and BN characterized by transmission electron microscopy shows a preferred stacking angle of near 0 degrees. Field-effect transistors (FETs) fabricated on ZrS2 flakes showed n-type transport behavior with an estimated mobility of 0.1-1.1 cm(2) V-1 s(-1).; National Natural Science Foundation of China (NNSFC) [21373066, 11304052]; Beijing Nova Program [2015B049]; China Postdoctoral Science Foundation [2013M540900]; NNSFC [21233001, 21129001, 51272006, 51121091]; SCI(E); EI; PubMed; ARTICLE; xielm@nanoctr.cn; 22; 7051-7054; 137
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/419381]
专题	化学与分子工程学院
推荐引用方式 GB/T 7714	Zhang, Mei,Zhu, Yiming,Wang, Xinsheng,et al. Controlled Synthesis of ZrS2 Mono layer and Few Layers on Hexagonal Boron Nitride[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2015.
APA	Zhang, Mei.,Zhu, Yiming.,Wang, Xinsheng.,Feng, Qingliang.,Qiao, Shanlin.,...&Xie, Liming.(2015).Controlled Synthesis of ZrS2 Mono layer and Few Layers on Hexagonal Boron Nitride.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY.
MLA	Zhang, Mei,et al."Controlled Synthesis of ZrS2 Mono layer and Few Layers on Hexagonal Boron Nitride".JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2015).