Two-bit memory devices based on single-wall carbon nanotubes: Demonstration and mechanism

doi:10.1088/0957-4484/18/12/125206

CORC > 北京大学 > 化学与分子工程学院

	Two-bit memory devices based on single-wall carbon nanotubes: Demonstration and mechanism
	Guo, Ao ; Fu, Yunyi ; Wang, Chuan ; Guan, Lunhui ; Liu, Jia ; Shi, Zujin ; Gu, Zhennan ; Huang, Ru ; Zhang, Xing
刊名	nanotechnology
	2007
DOI	10.1088/0957-4484/18/12/125206
英文摘要	Two-bit memory devices of SWNTs, based on the hysteresis effect, have been demonstrated for the first time. The pertinent memory behaviours seem to originate from the capacitive effect due to polarization of molecules, especially the surface-bound water molecules on SiO2 in close proximity to carbon nanotubes. Our investigations are intimately linked with ultrahigh-density memory applications, and possibly go a long way in broadening the memory applications of SWNTs, for example from nonvolatile to volatile cells. ? IOP Publishing Ltd.; EI; 0; 12; 18
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/410070]
专题	化学与分子工程学院信息科学技术学院
推荐引用方式 GB/T 7714	Guo, Ao,Fu, Yunyi,Wang, Chuan,et al. Two-bit memory devices based on single-wall carbon nanotubes: Demonstration and mechanism[J]. nanotechnology,2007.
APA	Guo, Ao.,Fu, Yunyi.,Wang, Chuan.,Guan, Lunhui.,Liu, Jia.,...&Zhang, Xing.(2007).Two-bit memory devices based on single-wall carbon nanotubes: Demonstration and mechanism.nanotechnology.
MLA	Guo, Ao,et al."Two-bit memory devices based on single-wall carbon nanotubes: Demonstration and mechanism".nanotechnology (2007).