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Synthesis of Er3+ doped silicon based light emitting material by sol gel method
Xie, DT ; Wang, XG ; Xu, YZ ; Wu, JG ; Xu, GX
2000
关键词sol-gel Er doped material EXAFS 1.54 mu m photoluminescence LUMINESCENCE SI
英文摘要We suggested a new synthesis process, the sol-gel method, to incorporate high concentration of Er3+ ions into the silicate film on silicon substrate. The coating solutions with uniformly dispersed metal ions were prepared from Er(NO)(3) solution, Si(OC2H5)(4) and ethanol. Spin coating was carried out onto a treated mono-crystalline silicon (100) substrate, at a speed of about 4000-rpm for 8s. The precursor films were annealed in air at 500 degrees C for 2 hours. Er-related similar to 1.54 mu m photoluminescence was observed at room temperature. The optimal doped concentrations of Er3+ in SiO2 film was estimated at about similar to 10(21)/cm(3). Through characterizations of AFM, FTIR, DTA, TG and EXAFS, we found that: the synthesized film is compact and smooth in microscope; 500 degrees C annealing is enough to perform the structure change of gel to glass; and, the Er-O formed complex with coordinate number of 9. Because of the formation of Er-O complex, Er-O-Si can form the net structure in the synthesized film. The configuration could not only increase the optical activity of ions, but also improve the homogenous of Er3+ ions in SiO2. Thus we demonstrated the sol-gel process is an efficient way to overcome the quench effect of concentration and increase the distribution quality.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000088119400034&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Materials Science, Multidisciplinary; Optics; EI; CPCI-S(ISTP); 1
语种英语
DOI标识10.1117/12.382871
内容类型其他
源URL[http://ir.pku.edu.cn/handle/20.500.11897/407056]  
专题化学与分子工程学院
推荐引用方式
GB/T 7714
Xie, DT,Wang, XG,Xu, YZ,et al. Synthesis of Er3+ doped silicon based light emitting material by sol gel method. 2000-01-01.
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