Field-effect transistors based on single-wall carbon nanotubes bundles

CORC > 北京大学 > 化学与分子工程学院

	Field-effect transistors based on single-wall carbon nanotubes bundles
	Wang, XF ; Guo, A ; Guan, LH ; Shi, ZJ ; Gu, ZN ; Fu, YY ; Zhang, X ; Huang, R
刊名	chinese journal of electronics
	2005
关键词	carbon nanotubes bundle field-effect transistors ambipolar hysteresis CIRCUITS ROPES
英文摘要	The electric transport properties of Single-walled carbon nanotubes (SWNT) bundles array have been measured. We report the fabrications and performances of nanoscale Field-effect transistors (FET) based on SWNT bundles array. In addition to p-type FET, we present a new technique by which ambipolar FETs can be fabricated. The I-on/I-off ratio of ambipolar FETs approaches ten to the 5th order of magnitude. The reasons for ambipolar character are also qualitatively discussed. Both p-type and ambipolar FETs exhibit hysteresis in their electrical characteristics.; Engineering, Electrical & Electronic; SCI(E); EI; 1; ARTICLE; 4; 599-602; 14
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/399523]
专题	化学与分子工程学院信息科学技术学院
推荐引用方式 GB/T 7714	Wang, XF,Guo, A,Guan, LH,et al. Field-effect transistors based on single-wall carbon nanotubes bundles[J]. chinese journal of electronics,2005.
APA	Wang, XF.,Guo, A.,Guan, LH.,Shi, ZJ.,Gu, ZN.,...&Huang, R.(2005).Field-effect transistors based on single-wall carbon nanotubes bundles.chinese journal of electronics.
MLA	Wang, XF,et al."Field-effect transistors based on single-wall carbon nanotubes bundles".chinese journal of electronics (2005).