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	Modified RCA clean transfer of graphene and all-carbon electronic devices fabrication
	Liang, Xuelei ; Sperling, Brent A. ; Calizo, Irene ; Cheng, Guangjun ; Hacker, Christina A. ; Zhang, Qin ; Obeng, Yaw S. ; Yan, Kai ; Peng, Hailin ; Walker, Angela R. Hight ; Richter, Curt A.
	2011
英文摘要	Graphene is regarded as a promising material that could be the basis for future generations of low-power, faster, and smaller electronics [1,2]. Currently, chemical vapor deposition (CVD) growth method is the only way that can produce large area monolayer graphene up to tens of inches with high quality [3,4], which makes it the most promising graphene producing method for large scale device applications. The first step necessary in fabricating devices from CVD-grown graphene, is to transfer the graphene from the metal growth substrate onto a device-compatible substrate (typically an insulator). It is crucial to device performance, yield, and uniformity that the quality of the graphene is not degraded during this transfer process. ? 2011 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ISDRS.2011.6135285
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/327408]
专题	化学与分子工程学院
推荐引用方式 GB/T 7714	Liang, Xuelei,Sperling, Brent A.,Calizo, Irene,et al. Modified RCA clean transfer of graphene and all-carbon electronic devices fabrication. 2011-01-01.

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