Nanometer-scale fabrication and data storage on charge transfer complex TEA(TCNQ)(2) single crystal | |
Bao, XX ; Chen, HF ; Liu, ZF | |
2000 | |
关键词 | charge transfer complex data storage gasificable decomposition STM Raman Spectroscopy mass spectroscopy SCANNING TUNNELING MICROSCOPE DENSITY DATA-STORAGE THIN-FILM PROBE MICROSCOPE SURFACE |
英文摘要 | Nanometer-scale holes and words were reproducibly created on a typical organic charge transfer compound, Triethylammonium Bis-7,7,8,8-tetracyanoquinodimethanide (TEA(TCNQ)(2)) single crystal, using scanning tunneling microscope in ambient conditions by applying a pulse voltage across the tunneling gap, The decomposition products of TEA(TCNQ)(2) single crystal were investigated with mass spectroscopy by applying a pulse to the crystal in a vacuum tube. TEA was the sole product being detected. A micro-Raman Spectroscopy was used to fabricate and characterize the sample using a He-Ne laser. A dots array was written by a focused beam and in situ Raman spectra showed the sample was decomposited. The most possible mechanism of holes formation appears to be TEA(TCNQ)(2) decomposition and TEA evaporation by heating effect of STM current. Comparing data storage in TEA(TCNQ)(2) single crystal with a market-sell CD-R disk, the writing threshold value of TEA(TCNQ)(2) is much smaller that of the CD-R disk. This kind of organic conductor may be a promising material for the STM-based high density storage and popular optical storage techniques.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000087781500020&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Materials Science, Multidisciplinary; Optics; CPCI-S(ISTP); 2 |
语种 | 英语 |
DOI标识 | 10.1117/12.382808 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/313887] |
专题 | 化学与分子工程学院 |
推荐引用方式 GB/T 7714 | Bao, XX,Chen, HF,Liu, ZF. Nanometer-scale fabrication and data storage on charge transfer complex TEA(TCNQ)(2) single crystal. 2000-01-01. |
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