A reversible electrical memory switching and its microscopic mechanism   in amorphous (NCTA)(2)Ni(DMIT)(2) thin films

doi:10.1016/S0254-0584(97)01887-7

CORC > 北京大学 > 化学与分子工程学院

	A reversible electrical memory switching and its microscopic mechanism in amorphous (NCTA)(2)Ni(DMIT)(2) thin films
	Han, MY ; Huang, W
刊名	材料化学与材料物理学
	1997
关键词	molecular switching thin films DMIT 1,3-DITHIOLE-2-THIONE-4,5-DITHIOLATE METAL DMIT
DOI	10.1016/S0254-0584(97)01887-7
英文摘要	A reversible and reproducible bistable electrical memory switching phenomenon was observed in an asymmetrical sandwich structure with coherent electrodeposited amorphous thin films between Al and indium tin oxide electrodes based on a new type of molecular semiconductor (NCTA)(2)Ni(DMIT)(2). It can be achieved between a high-impedance OFF state and a low-impedance ON state simply by changing the polarity of an applied electric field across the device. The electrical memory switching process is described in detail, and a plausible microscopic switching mechanism is proposed based on the formation and deformation of mixed-valence semiconductor through electric field-induced solid-state redox reaction resulting from a negative fractional charge withdrawing and injecting process.; Materials Science, Multidisciplinary; SCI(E); 3; ARTICLE; 2; 179-183; 49
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/258289]
专题	化学与分子工程学院
推荐引用方式 GB/T 7714	Han, MY,Huang, W. A reversible electrical memory switching and its microscopic mechanism in amorphous (NCTA)(2)Ni(DMIT)(2) thin films[J]. 材料化学与材料物理学,1997.
APA	Han, MY,&Huang, W.(1997).A reversible electrical memory switching and its microscopic mechanism in amorphous (NCTA)(2)Ni(DMIT)(2) thin films.材料化学与材料物理学.
MLA	Han, MY,et al."A reversible electrical memory switching and its microscopic mechanism in amorphous (NCTA)(2)Ni(DMIT)(2) thin films".材料化学与材料物理学 (1997).