Scanning-tunneling-microscopy based thermochemical hole burning on a new   charge-transfer complex and its potential for data storage

doi:10.1002/adma.200401148

CORC > 北京大学 > 化学与分子工程学院

	Scanning-tunneling-microscopy based thermochemical hole burning on a new charge-transfer complex and its potential for data storage
	Peng, HL ; Ran, CB ; Yu, XC ; Zhang, R ; Liu, ZF
刊名	advanced materials
	2005
关键词	NANOMETER-SCALE MECHANISM
DOI	10.1002/adma.200401148
英文摘要	Ultrahigh-density data storage is realized using a thermochemical hole-burning technique based on scanning tunneling microscopy (STM). The heating effect induced by the STM current gives rise to localized thermochemical decomposition of an organic charge-transfer complex substrate and subsequent gasification of its low-boiling-point decomposition products. A large array of nanometer-sized holes is recorded on the substrate (see Figure).; Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter; SCI(E); EI; 23; ARTICLE; 4; 459-+; 17
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/254354]
专题	化学与分子工程学院
推荐引用方式 GB/T 7714	Peng, HL,Ran, CB,Yu, XC,et al. Scanning-tunneling-microscopy based thermochemical hole burning on a new charge-transfer complex and its potential for data storage[J]. advanced materials,2005.
APA	Peng, HL,Ran, CB,Yu, XC,Zhang, R,&Liu, ZF.(2005).Scanning-tunneling-microscopy based thermochemical hole burning on a new charge-transfer complex and its potential for data storage.advanced materials.
MLA	Peng, HL,et al."Scanning-tunneling-microscopy based thermochemical hole burning on a new charge-transfer complex and its potential for data storage".advanced materials (2005).