Electrochemical preparation of CdSe nanowire arrays

CORC > 北京大学 > 化学与分子工程学院

	Electrochemical preparation of CdSe nanowire arrays
	Xu, DS ; Shi, XS ; Guo, GL ; Gui, LL ; Tang, YQ
刊名	journal of physical chemistry b
	2000
关键词	LASER-ABLATION SILICON CARBON FABRICATION GROWTH WIRES
DOI	10.1021/jp9930402
英文摘要	We have successfully prepared CdSe nanowire arrays by direct-current electrodeposition in porous anodic aluminum oxide templates from a dimethyl sulfoxide solution containing CdCl2 and elemental Se. Electron microscopy results show that the length, diameter, and direction of growth of the nanowires are quite uniform. X-ray energy dispersion analysis indicates that the atomic composition of Cd and Se is very close to a 1:1 stoichiometry. Furthermore, X-ray diffraction and high-resolution electron microscope investigations demonstrate that the CdSe nanowires are a uniform hexagonal CdSe crystal.; Chemistry, Physical; SCI(E); 155; ARTICLE; 21; 5061-5063; 104
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/213460]
专题	化学与分子工程学院
推荐引用方式 GB/T 7714	Xu, DS,Shi, XS,Guo, GL,et al. Electrochemical preparation of CdSe nanowire arrays[J]. journal of physical chemistry b,2000.
APA	Xu, DS,Shi, XS,Guo, GL,Gui, LL,&Tang, YQ.(2000).Electrochemical preparation of CdSe nanowire arrays.journal of physical chemistry b.
MLA	Xu, DS,et al."Electrochemical preparation of CdSe nanowire arrays".journal of physical chemistry b (2000).