Doping-free fabrication of carbon nanotube based ballistic CMOS devices   and circuits

doi:10.1021/nl0717107

CORC > 北京大学 > 化学与分子工程学院

	Doping-free fabrication of carbon nanotube based ballistic CMOS devices and circuits
	Zhang, Zhiyong ; Liang, Xuelei ; Wang, Sheng ; Yao, Kun ; Hu, Youfan ; Zhu, Yuzhen ; Chen, Qing ; Zhou, Weiwei ; Li, Yan ; Yao, Yagang ; Zhang, Jin ; Peng, Lian-Mao
刊名	nano letters
	2007
关键词	FIELD-EFFECT TRANSISTORS LOGIC GATES SINGLE PERFORMANCE CONTACT TRANSPORT
DOI	10.1021/nl0717107
英文摘要	We have fabricated ballistic n-type carbon nanotube (CNT)-based field-effect transistors (FETs) by contacting semiconducting single wall CNTs using Sc. Together with the demonstrated ballistic p-type CNT FETs using Pd contacts, our work closes the gap for doping-free fabrication of CNT-based ballistic complementary metal-oxide semiconductor (CMOS) devices and circuits. We demonstrated the feasibility of this dopingfree CMOS technology by fabricating a simple CMOS inverter on a SiO2/Si substrate using the back-gate geometry, but in principle much more complicated CMOS circuits may be integrated on a CNT on any suitable insulator substrate using the top-gate geometry and high-kappa dielectrics. This CNT-based CMOS technology only requires the patterning of arrays of parallel semiconducting CNTs with moderately narrow diameter range, for example, 1.6-2.4 nm, which is within the reach of current nanotechnology. This may lead to the integration of CNT-based CMOS devices with increasing complexity and possibly find its way into the computers brain: the logic circuit.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000251581600010&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter; SCI(E); EI; 186; ARTICLE; 12; 3603-3607; 7
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153033]
专题	化学与分子工程学院信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Zhiyong,Liang, Xuelei,Wang, Sheng,et al. Doping-free fabrication of carbon nanotube based ballistic CMOS devices and circuits[J]. nano letters,2007.
APA	Zhang, Zhiyong.,Liang, Xuelei.,Wang, Sheng.,Yao, Kun.,Hu, Youfan.,...&Peng, Lian-Mao.(2007).Doping-free fabrication of carbon nanotube based ballistic CMOS devices and circuits.nano letters.
MLA	Zhang, Zhiyong,et al."Doping-free fabrication of carbon nanotube based ballistic CMOS devices and circuits".nano letters (2007).