Almost Perfectly Symmetric SWCNT-Based CMOS Devices and Scaling

doi:10.1021/nn901079p

CORC > 北京大学 > 化学与分子工程学院

	Almost Perfectly Symmetric SWCNT-Based CMOS Devices and Scaling
	Zhang, Zhiyong ; Wang, Sheng ; Wang, Zhenxing ; Ding, Li ; Pei, Tian ; Hu, Zhudong ; Liang, Xuelei ; Chen, Qing ; Li, Yan ; Peng, Lian-Mao
刊名	acs nano
	2009
关键词	carbon nanotube CMOS inverter mobility scaling FIELD-EFFECT TRANSISTORS CARBON-NANOTUBE TRANSISTORS ELECTRICAL-TRANSPORT INTEGRATED-CIRCUITS LOGIC GATES PERFORMANCE DIELECTRICS
DOI	10.1021/nn901079p
英文摘要	Symmetric n- and p-type field-effect transistors (FETs) have been fabricated on the same undoped single-walled carbon nanotube (SWCNT). The polarity of the FET is defined by controlled injection of electrons (n-type, via Sc electrodes) or holes (p-type, via Pd electrodes) into the SWCNT, instead of via chemically doping the SWCNT, The SWCNT-based FETs with different channel lengths show a clear trend of performance improvement for channel length scaling. Taking full advantage of the perfect symmetric band structure of the semiconductor SWCNT, a perfect SWCNT-based CMOS inverter is demonstrated, which gives a voltage gain of over 160, and for the two adjacent n- and p-type FETs fabricated on the same SWCNT, high field mobility is realized simultaneously for electrons (3000 cm(2)/V.s) and holes (3300 cm(2)/V.s).; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000271951200059&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; SCI(E); EI; PubMed; 48; ARTICLE; 11; 3781-3787; 3
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/151864]
专题	化学与分子工程学院信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Zhiyong,Wang, Sheng,Wang, Zhenxing,et al. Almost Perfectly Symmetric SWCNT-Based CMOS Devices and Scaling[J]. acs nano,2009.
APA	Zhang, Zhiyong.,Wang, Sheng.,Wang, Zhenxing.,Ding, Li.,Pei, Tian.,...&Peng, Lian-Mao.(2009).Almost Perfectly Symmetric SWCNT-Based CMOS Devices and Scaling.acs nano.
MLA	Zhang, Zhiyong,et al."Almost Perfectly Symmetric SWCNT-Based CMOS Devices and Scaling".acs nano (2009).