Self-Aligned U-Gate Carbon Nanotube Field-Effect Transistor with   Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering

doi:10.1021/nn102091h

CORC > 北京大学 > 化学与分子工程学院

	Self-Aligned U-Gate Carbon Nanotube Field-Effect Transistor with Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering
	Ding, Li ; Wang, Zhenxing ; Pei, Tian ; Zhang, Zhiyong ; Wang, Sheng ; Xu, Huilong ; Peng, Fei ; Li, Yan ; Peng, Lian-Mao
刊名	acs nano
	2011
关键词	carbon nanotube field-effect transistor self-aligned high-speed circuit parasitic capacitance PERFORMANCE ELECTRONICS NANOWIRES CIRCUITS VOLTAGE GROWTH
DOI	10.1021/nn102091h
英文摘要	A novel self-aligned U-gate, structure for carbon nanotube (CNT) field-effect transistors (FETs) Is Introduced and shown to yield excellent, do properties and high reproducibility that are comparable with that of the best CNT FETs based on the previously developed self aligned device structures. In particular the subthreshold swing of the U-gate FET Is 75 mV/dec and the drain-induced barrier lowering is effectively zero, indicating that the electrostatic potential of the whole CNT channel is most efficiently controlled by the U-gate and that the CNT device is a well-behaved FET. Moreover the high-frequency response of the U-gate FET is investigated, and the parasitic capacitance of the device is measured and shown to be one magnitude smaller than that of the previously developed self-aligned device structures. Direct frequency domain measurements show that the U-gate CNT FETs can operate up to 800 MHz, which is also higher than previously reported values. The large improvement in the device high-frequency behavior Is largely due to the replacement of the high-kappa dielectric material between the source/drain and the gate by a vacant space with kappa approximate to 1, and the significant reduction in the device parasitic capacitance renders the U-gate CNT FETs promising for rf applications.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000289742100013&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; SCI(E); EI; PubMed; 17; ARTICLE; 4; 2512-2519; 5
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/151848]
专题	化学与分子工程学院信息科学技术学院
推荐引用方式 GB/T 7714	Ding, Li,Wang, Zhenxing,Pei, Tian,et al. Self-Aligned U-Gate Carbon Nanotube Field-Effect Transistor with Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering[J]. acs nano,2011.
APA	Ding, Li.,Wang, Zhenxing.,Pei, Tian.,Zhang, Zhiyong.,Wang, Sheng.,...&Peng, Lian-Mao.(2011).Self-Aligned U-Gate Carbon Nanotube Field-Effect Transistor with Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering.acs nano.
MLA	Ding, Li,et al."Self-Aligned U-Gate Carbon Nanotube Field-Effect Transistor with Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering".acs nano (2011).