Recognition on systems RbF-GaF3 and CsF-GaF3

doi:10.1016/S0040-6031(00)00596-7

CORC > 北京大学 > 化学与分子工程学院

	Recognition on systems RbF-GaF3 and CsF-GaF3
	Chen, R ; Zhang, QY
刊名	热化学学报
	2000
关键词	RbF CsF GaF3 phase diagram aluminum brazing
DOI	10.1016/S0040-6031(00)00596-7
英文摘要	The systems RbF-GaF3 and CsF-GaF3 were re-investigated by DTA and XRD method. In the system RbF-GaF3, with eutectic El at 750 degreesC in the location of 8.5 mol% GaF3 and E-2 at 749 degreesC in the location of 43.0 mol% GaF3, three compounds Rb3GaF6, RbGaF4 and RbF . 2GaF(3) were identified and indexed by XRD. The indexed result of alpha -Rb3GaF6 could not be successfully obtained, beta -Rb3GaF6 is tetragonal, a=6.324+/-0.004, c=8.860+/-0.003 Angstrom. RbGaF4 is orthorhombic, a=9.821+/-0.006, b=9.517+/-0.005, c=8.060+/-0.006 Angstrom; RbF . 2GaF(3) is also orthorhombic, a=9.459+/-0.005, b = 9.336 +/- 0.005, c = 7.685 +/- 0.005 Angstrom. In the system CsF-GaF3, with eutectic E-1 at 664 degreesC in the location of 7.5 mol% GaF3 and E2 at 675 degreesC in the position of 44.0 mol% GaF3, two compounds were confirmed, alpha -Cs3GaF6 is orthorhombic with a = 10.62 +/- 0.02, b = 9.959 +/- 0.006 and c = 5.607 +/- 0.005 Angstrom: beta -Cs3GaF6 is also orthorhombic, a = 10.356 +/- 0.003, b = 8.280 +/- 0.003, c = 7.621 +/- 0.005 Angstrom; gamma -Cs3GaF6 is tetragonal, a = 6.833 +/- 0.003, c = 9.869 +/- 0.002 Angstrom; CsGaF4 is orthorhombic, a = 8.571 +/- 0.007, b = 7.575 +/- 0.007 and c = 6.981 +/- 0.006 Angstrom. (C) 2000 Elsevier Science B.V. All rights reserved .; Chemistry, Analytical; Chemistry, Physical; SCI(E); 0; ARTICLE; 1-2; 55-59; 363
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/151665]
专题	化学与分子工程学院
推荐引用方式 GB/T 7714	Chen, R,Zhang, QY. Recognition on systems RbF-GaF3 and CsF-GaF3[J]. 热化学学报,2000.
APA	Chen, R,&Zhang, QY.(2000).Recognition on systems RbF-GaF3 and CsF-GaF3.热化学学报.
MLA	Chen, R,et al."Recognition on systems RbF-GaF3 and CsF-GaF3".热化学学报 (2000).