Formation of Si wells and pyramids on (100) surface as a result of Zn-Si   interaction

doi:10.1016/j.mssp.2011.02.008

CORC > 北京大学 > 化学与分子工程学院

	Formation of Si wells and pyramids on (100) surface as a result of Zn-Si interaction
	Wu, Yue ; Zhang, Gengmin ; Xi, Zhonghe
刊名	materials science in semiconductor processing
	2011
关键词	Eutectics Silicon Zinc Pyramid Well ZINC-OXIDE NANOSTRUCTURES CRYSTAL-GROWTH NANOWIRES SILICON
DOI	10.1016/j.mssp.2011.02.008
英文摘要	Interaction between between metallic zinc and Si wafer at moderately high temperatures was found to generate either concave wells or hollow pyramid-shaped protrusions on the (1 0 0) wafer surface. The formation of the wells is attributed to the dissolution of silicon at temperatures much lower than its melting point in the form of Zn-Si eutectic. When the temperature was raised, Zn atoms in the eutectic droplets evaporated and Si atoms in them precipitated accordingly. If a droplet contained plenty of Si atoms, these Si atoms could encounter each other during precipitation at the surface of the droplet and condense into a hollow pyramid-shaped protrusion. (C) 2011 Elsevier Ltd. All rights reserved.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000298518800020&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter; SCI(E); EI; 1; ARTICLE; 3-4; 302-305; 14
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/151020]
专题	化学与分子工程学院信息科学技术学院
推荐引用方式 GB/T 7714	Wu, Yue,Zhang, Gengmin,Xi, Zhonghe. Formation of Si wells and pyramids on (100) surface as a result of Zn-Si interaction[J]. materials science in semiconductor processing,2011.
APA	Wu, Yue,Zhang, Gengmin,&Xi, Zhonghe.(2011).Formation of Si wells and pyramids on (100) surface as a result of Zn-Si interaction.materials science in semiconductor processing.
MLA	Wu, Yue,et al."Formation of Si wells and pyramids on (100) surface as a result of Zn-Si interaction".materials science in semiconductor processing (2011).