Formation of Si wells and pyramids on (100) surface as a result of Zn-Si interaction | |
Wu, Yue ; Zhang, Gengmin ; Xi, Zhonghe | |
刊名 | materials science in semiconductor processing
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2011 | |
关键词 | Eutectics Silicon Zinc Pyramid Well ZINC-OXIDE NANOSTRUCTURES CRYSTAL-GROWTH NANOWIRES SILICON |
DOI | 10.1016/j.mssp.2011.02.008 |
英文摘要 | Interaction between between metallic zinc and Si wafer at moderately high temperatures was found to generate either concave wells or hollow pyramid-shaped protrusions on the (1 0 0) wafer surface. The formation of the wells is attributed to the dissolution of silicon at temperatures much lower than its melting point in the form of Zn-Si eutectic. When the temperature was raised, Zn atoms in the eutectic droplets evaporated and Si atoms in them precipitated accordingly. If a droplet contained plenty of Si atoms, these Si atoms could encounter each other during precipitation at the surface of the droplet and condense into a hollow pyramid-shaped protrusion. (C) 2011 Elsevier Ltd. All rights reserved.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000298518800020&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter; SCI(E); EI; 1; ARTICLE; 3-4; 302-305; 14 |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/151020] ![]() |
专题 | 化学与分子工程学院 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Wu, Yue,Zhang, Gengmin,Xi, Zhonghe. Formation of Si wells and pyramids on (100) surface as a result of Zn-Si interaction[J]. materials science in semiconductor processing,2011. |
APA | Wu, Yue,Zhang, Gengmin,&Xi, Zhonghe.(2011).Formation of Si wells and pyramids on (100) surface as a result of Zn-Si interaction.materials science in semiconductor processing. |
MLA | Wu, Yue,et al."Formation of Si wells and pyramids on (100) surface as a result of Zn-Si interaction".materials science in semiconductor processing (2011). |
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