| 用溶胶-凝胶方法制备Tb~(3+)掺杂的硅基发光材料; Preparation of Tb3+-ion-doped Si-based light-emitting materials with sol-gel method | |
| 谢大徑 ; 吴瑾光 ; 马刚 ; 闫文飞 ; 周维金 ; 徐光宪 ; 徐端夫 ; 陶靖 ; 秦国刚 | |
| 1999 | |
| 关键词 | 发光材料 溶胶-凝胶方法 凝胶薄膜 原子力显微镜 退火温度 微米量级 退火条件 差热分析 发光强度 Tb |
| 英文摘要 | 报道了用溶胶凝胶方法制备 Ｔｂ３ ＋ 掺杂的硅基发光材料．并用荧光光谱、傅里叶变换红外光谱、原子力显微镜、差热分析和热重测定等方法研究了材料的制备规律．实验结果表明该制备方法在５００ ℃的退火条件下即可以使 Ｔｂ３ ＋ 掺杂到硅基发光材料产生室温下的５４５ ｎ ｍ荧光；稀土离子的掺杂浓度可任意调节，最佳浓度为５ ×１０１９／ｃｍ ３ ；薄膜在微米量级上有较好的平整度．用该方法在改善材料的掺杂浓度、发光性能及降低材料的退火温度方面有特殊的优越性．; By sol-gel process and appropriate heat treatment, Tb3+-doped light-emitting films were prepared on the silicon bases. The structural changes of the xerogels and the fluorescence properties of the Tb3+ ions doped were studied by photoluminescence, Fourier transformed infrared spectroscopy, atom force microscope, differential thermal analysis and thermal gravimetry analysis methods. The results show that the films doped with Tb3+ ions can produce photoluminescence at 545 nm at room temperature after 400 degrees C heating-treatment, and have good properties in 10(-6) m level. The concentration of the Tb3+ ions doped reached 10(19)/cm(3).; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000082386800028&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; SCI(E); EI; 中文核心期刊要目总览(PKU); 中国科学引文数据库(CSCD); 5; 09; 1773-1780; 48 |
| 语种 | 中文 |
| 出处 | SCI ; 知网 |
| 出版者 | 物理学报 |
| 内容类型 | 其他 |
| 源URL | [http://hdl.handle.net/20.500.11897/78562]  |
| 专题 | 化学与分子工程学院 |
| 推荐引用方式 GB/T 7714 | 谢大徑,吴瑾光,马刚,等. 用溶胶-凝胶方法制备Tb~(3+)掺杂的硅基发光材料, Preparation of Tb3+-ion-doped Si-based light-emitting materials with sol-gel method. 1999-01-01. |
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