QQ客服 官方微博 反馈留言

	Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs
	Di Shaoyan ; Shen Lei ; Lun Zhiyuan ; Chang Pengying ; Zhao Kai ; Lu Tiao ; Du Gang ; Liu Xiaoyan
	2017
关键词	Boltzmann transport equation GaSb surface orientation double gate
英文摘要	The performance of double gate GaSb nMOSFETs with surface orientations of (100) and (111) are compared by deterministically solving the time-dependent Boltzmann transport equation (BTE). Results show that the on-state current of the device with (111) surface orientation is almost three times larger than the (100) case due to the higher injection velocity. Moreover, the scattering rate of the (111) device is slightly lower than that of the (100) device.; Project supported by the National Natural Science Foundation of China; 中国科学引文数据库(CSCD); 4; 047201-1-047201-5; 26
语种	英语
出处	CSCD
出版者	Chinese Physics. B
内容类型	其他
源URL	[http://hdl.handle.net/20.500.11897/477155]
专题	数学科学学院 信息科学技术学院
推荐引用方式 GB/T 7714	Di Shaoyan,Shen Lei,Lun Zhiyuan,et al. Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs. 2017-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。