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	Electron delocalization and relaxation behavior in Cu-doped Bi2Se3 films
	Li, Mingze; Wang, Zhenhua; Yang, Liang; Li, Da; Yao, Q. R.; Rao, G. H.; Gao, Xuan P. A.; Zhang, Zhidong; Wang, ZH (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China.; Wang, ZH (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China.
刊名	AMER PHYSICAL SOC
	2017-08-24
卷号	96期号:7页码:-
ISSN号	2469-9950
英文摘要	CuxBi2Se3 is known for superconductivity due to Cu intercalation in the van der Waals gaps between the quintuple layers of Bi2Se3 at x > 0.10. Here we report the synthesis and transport properties of Cu-doped CuxBi2Se3 films prepared by the chemical-vapor-deposition (CVD) method with 0.11 >= x >= 0. It is found that the insulatinglike temperature-dependent resistivity of polycrystalline CuxBi2Se3 films exhibits a marked metallic downturn and an increase of carrier concentration below similar to 37 K. There is also a time-dependent slow relaxation behavior in the resistance at low temperature. These effects might be related to the strong hybridization between Cu+ and Cu2+ conduction bands from the intercalated Cu+ and substituted Cu2+ sites in Bi2Se3 films. The findings here have important implications for the understanding and development of doping-induced superconductivity in topological insulators.; CuxBi2Se3 is known for superconductivity due to Cu intercalation in the van der Waals gaps between the quintuple layers of Bi2Se3 at x > 0.10. Here we report the synthesis and transport properties of Cu-doped CuxBi2Se3 films prepared by the chemical-vapor-deposition (CVD) method with 0.11 >= x >= 0. It is found that the insulatinglike temperature-dependent resistivity of polycrystalline CuxBi2Se3 films exhibits a marked metallic downturn and an increase of carrier concentration below similar to 37 K. There is also a time-dependent slow relaxation behavior in the resistance at low temperature. These effects might be related to the strong hybridization between Cu+ and Cu2+ conduction bands from the intercalated Cu+ and substituted Cu2+ sites in Bi2Se3 films. The findings here have important implications for the understanding and development of doping-induced superconductivity in topological insulators.
学科主题	Physics, Condensed Matter
语种	英语
资助机构	National Natural Science Foundation of China [51522104, 51331006]; National Key R&D Program of China [2017YFA0206302]; National Science Foundation [DMR-1151534]; Guangxi National Science Foundation [2012GXNS-FGA060002]
公开日期	2018-01-10
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/79142]
专题	金属研究所_中国科学院金属研究所
通讯作者	Wang, ZH (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China.; Wang, ZH (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China.
推荐引用方式 GB/T 7714	Li, Mingze,Wang, Zhenhua,Yang, Liang,et al. Electron delocalization and relaxation behavior in Cu-doped Bi2Se3 films[J]. AMER PHYSICAL SOC,2017,96(7):-.
APA	Li, Mingze.,Wang, Zhenhua.,Yang, Liang.,Li, Da.,Yao, Q. R..,...&Wang, ZH .(2017).Electron delocalization and relaxation behavior in Cu-doped Bi2Se3 films.AMER PHYSICAL SOC,96(7),-.
MLA	Li, Mingze,et al."Electron delocalization and relaxation behavior in Cu-doped Bi2Se3 films".AMER PHYSICAL SOC 96.7(2017):-.

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