Multi-wavelength tailoring of a ZnGa2O4 nanosheet phosphor via defect engineering

doi:10.1039/c8nr05072d

CORC > 金属研究所 > 中国科学院金属研究所

	Multi-wavelength tailoring of a ZnGa2O4 nanosheet phosphor via defect engineering
	Yang, WJ ; Li, J ; Liu, BD ; Zhang, XL ; Zhang, C 1; Niu, PJ ; Jiang, X
刊名	NANOSCALE
	2018-10-28
卷号	10 期号:40 页码:19039-19045
ISSN号	2040-3364
DOI	10.1039/c8nr05072d
英文摘要	The multi-wavelength luminescence tailoring of an individual phosphor free of external dopants is of great interest and technologically important for practical applications. Using ZnGa2O4 nanosheets as a target phosphor, we demonstrate how to artificially control the luminescence wavelength centers and their emission intensities to simultaneously emit ultraviolet/blue, green and red light via a feasible defect engineering strategy. Simple high-temperature annealing of hydrothermally synthesized ZnGa2O4 nanosheets leads to the effective tunability of their emission process to present multi-wavelength luminescence due to the structural distortion and the formation of oxygen vacancies. Controlling the annealing temperature and time can further precisely modulate the wavelengths and their corresponding intensities. It is speculated that the migration of Ga into the [GaO4] tetrahedron and the O vacancy are responsible for the multi-wavelength luminescence of the ZnGa2O4 nanosheet phosphor. Finally, the tentative multi-wavelength luminescence behavior of the ZnGa2O4 nanosheet phosphor via defect engineering is discussed based on a series of evidenced experimental observations of XRD, XPS, HRTEM and CL.
学科主题	Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
WOS记录号	WOS:000448344100017
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/79886]
专题	金属研究所_中国科学院金属研究所
作者单位	1.Chinese Acad Sci, IMR, Shenyang Natl Lab Mat Sci SYNL, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China 3.Tianjin Polytech Univ, Sch Elect Engn & Automat, 399 Binshuixi Rd, Tianjin 300387, Peoples R China
推荐引用方式 GB/T 7714	Yang, WJ,Li, J,Liu, BD,et al. Multi-wavelength tailoring of a ZnGa2O4 nanosheet phosphor via defect engineering[J]. NANOSCALE,2018,10(40):19039-19045.
APA	Yang, WJ.,Li, J.,Liu, BD.,Zhang, XL.,Zhang, C.,...&Jiang, X.(2018).Multi-wavelength tailoring of a ZnGa2O4 nanosheet phosphor via defect engineering.NANOSCALE,10(40),19039-19045.
MLA	Yang, WJ,et al."Multi-wavelength tailoring of a ZnGa2O4 nanosheet phosphor via defect engineering".NANOSCALE 10.40(2018):19039-19045.