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Growth and quantum transport properties of vertical Bi2Se3 nanoplate films on Si substrates
Li, MZ; Wang, ZH; Yang, L1; Pan, DS; Li, D1; Gao, XPA; Zhang, ZD
刊名NANOTECHNOLOGY
2018-08-03
卷号29期号:31页码:-
关键词vertical growth Bi2Se3 thin film weak antilocalization
ISSN号0957-4484
DOI10.1088/1361-6528/aac457
英文摘要Controlling the growth direction (planar versus vertical) and surface-to-bulk ratio can lead to lots of unique properties for two-dimensional layered materials. We report a simple method to fabricate continuous films of vertical Bi2Se3 nanoplates on Si substrate and investigate the quantum transport properties of such films. In contrast to (001) oriented planar Bi2Se3 nanoplate film, vertical Bi2Se3 nanoplate films are enclosed by (015) facets, which possess high surface-to-bulk ratio that can enhance the quantum transport property of topological surface states. And by controlling the compactness of vertical Bi2Se3 nanoplates, we realized an effective tuning of the weak antilocalization effect from topological surface states in Bi2Se3 films. Our work paves a way for exploring the unique transport properties of this unconventional structure topological insulator film.
学科主题Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
语种英语
WOS记录号WOS:000434288900001
内容类型期刊论文
源URL[http://ir.imr.ac.cn/handle/321006/80037]  
专题金属研究所_中国科学院金属研究所
作者单位1.Chinese Acad Sci, Inst Met Res, Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China
3.Gao, Xuan P. A.] Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
推荐引用方式
GB/T 7714
Li, MZ,Wang, ZH,Yang, L,et al. Growth and quantum transport properties of vertical Bi2Se3 nanoplate films on Si substrates[J]. NANOTECHNOLOGY,2018,29(31):-.
APA Li, MZ.,Wang, ZH.,Yang, L.,Pan, DS.,Li, D.,...&Zhang, ZD.(2018).Growth and quantum transport properties of vertical Bi2Se3 nanoplate films on Si substrates.NANOTECHNOLOGY,29(31),-.
MLA Li, MZ,et al."Growth and quantum transport properties of vertical Bi2Se3 nanoplate films on Si substrates".NANOTECHNOLOGY 29.31(2018):-.
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