Effect of doping concentration on point defect structure in As-implanted ZnO

doi:10.1016/j.ssc.2017.04.021

	Effect of doping concentration on point defect structure in As-implanted ZnO
	Yuan MY(苑梦尧); Wang, HH; Yuan, MY; Wang HH(王焕华)
刊名	SOLID STATE COMMUNICATIONS
	2017
卷号	261 页码:41-45
关键词	P-type ZnO Ion implantation Diffuse x-ray scattering Point defects
ISSN号	0038-1098
DOI	10.1016/j.ssc.2017.04.021
文献子类	Article
英文摘要	The effect of doping concentration on the point defect structure of As-implanted ZnO single crystal was investigated using diffuse x-ray scattering and photoluminescence spectroscopy. Based on the assumption that the low-dose ion implantation did not shift the phonon dispersion of the lattice, Huang diffuse scattering signals were obtained by subtracting thermal diffuse scattering intensities. We found that the point defects aggregate into defect clusters after annealing, and their average size decreases and concentration increases with increasing the doping concentration. The underlying mechanisms of this counter-intuition result were suggested.
电子版国际标准刊号	1879-2766
WOS关键词	X-RAY-SCATTERING ; THIN-FILMS ; LATTICE ; SI
WOS研究方向	Physics
语种	英语
WOS记录号	WOS:000405690400009
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/284931]
专题	高能物理研究所_多学科研究中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Yuan MY,Wang, HH,Yuan, MY,et al. Effect of doping concentration on point defect structure in As-implanted ZnO[J]. SOLID STATE COMMUNICATIONS,2017,261:41-45.
APA	苑梦尧,Wang, HH,Yuan, MY,&王焕华.(2017).Effect of doping concentration on point defect structure in As-implanted ZnO.SOLID STATE COMMUNICATIONS,261,41-45.
MLA	苑梦尧,et al."Effect of doping concentration on point defect structure in As-implanted ZnO".SOLID STATE COMMUNICATIONS 261(2017):41-45.