High-mobility thin-film transistors based on aligned carbon nanotubes

doi:10.1063/1.1589181

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	High-mobility thin-film transistors based on aligned carbon nanotubes
	Xiao, K; Liu, YQ; Hu, PA; Yu, G; Wang, XB; Zhu, DB
刊名	APPLIED PHYSICS LETTERS
	2003-07-07
卷号	83 期号:1 页码:150-152
ISSN号	0003-6951
DOI	10.1063/1.1589181
英文摘要	Thin-film transistors based on aligned carbon nanotubes (CNTs) were fabricated by directly growing highly ordered CNTs on silicon dioxide surface. The transistor shows a pronounced field effect. Electric transport through the aligned carbon nanotubes is dominated by the holes at room temperature. A hole mobility (mu(p)) of the CNT thin-film transistor was estimated to be as high as 61.6 cm(2)/V s. Such a mobility is comparable to that of heavily doped n-Si and is larger than individual CNT field-effect transistor. Thus, it reveals a potential application of the aligned CNTs in electronics. (C) 2003 American Institute of Physics.
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000183877800051
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/80457]
专题	中国科学院化学研究所
通讯作者	Liu, YQ
作者单位	Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Xiao, K,Liu, YQ,Hu, PA,et al. High-mobility thin-film transistors based on aligned carbon nanotubes[J]. APPLIED PHYSICS LETTERS,2003,83(1):150-152.
APA	Xiao, K,Liu, YQ,Hu, PA,Yu, G,Wang, XB,&Zhu, DB.(2003).High-mobility thin-film transistors based on aligned carbon nanotubes.APPLIED PHYSICS LETTERS,83(1),150-152.
MLA	Xiao, K,et al."High-mobility thin-film transistors based on aligned carbon nanotubes".APPLIED PHYSICS LETTERS 83.1(2003):150-152.