High-mobility thin-film transistors based on aligned carbon nanotubes | |
Xiao, K; Liu, YQ; Hu, PA; Yu, G; Wang, XB; Zhu, DB | |
刊名 | APPLIED PHYSICS LETTERS
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2003-07-07 | |
卷号 | 83期号:1页码:150-152 |
ISSN号 | 0003-6951 |
DOI | 10.1063/1.1589181 |
英文摘要 | Thin-film transistors based on aligned carbon nanotubes (CNTs) were fabricated by directly growing highly ordered CNTs on silicon dioxide surface. The transistor shows a pronounced field effect. Electric transport through the aligned carbon nanotubes is dominated by the holes at room temperature. A hole mobility (mu(p)) of the CNT thin-film transistor was estimated to be as high as 61.6 cm(2)/V s. Such a mobility is comparable to that of heavily doped n-Si and is larger than individual CNT field-effect transistor. Thus, it reveals a potential application of the aligned CNTs in electronics. (C) 2003 American Institute of Physics. |
语种 | 英语 |
出版者 | AMER INST PHYSICS |
WOS记录号 | WOS:000183877800051 |
内容类型 | 期刊论文 |
源URL | [http://ir.iccas.ac.cn/handle/121111/80457] ![]() |
专题 | 中国科学院化学研究所 |
通讯作者 | Liu, YQ |
作者单位 | Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China |
推荐引用方式 GB/T 7714 | Xiao, K,Liu, YQ,Hu, PA,et al. High-mobility thin-film transistors based on aligned carbon nanotubes[J]. APPLIED PHYSICS LETTERS,2003,83(1):150-152. |
APA | Xiao, K,Liu, YQ,Hu, PA,Yu, G,Wang, XB,&Zhu, DB.(2003).High-mobility thin-film transistors based on aligned carbon nanotubes.APPLIED PHYSICS LETTERS,83(1),150-152. |
MLA | Xiao, K,et al."High-mobility thin-film transistors based on aligned carbon nanotubes".APPLIED PHYSICS LETTERS 83.1(2003):150-152. |
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